Datasheet > RN2711(TE85L,F)

RN2711(TE85L,F)

更新时间： 2024-09-15 19:59:47

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
6页	314K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353

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中文翻译

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技术参数
数据手册

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RN2711(TE85L,F) 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.77	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	120	元件数量：	2
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.2 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

RN2711(TE85L,F) 数据手册

RN2710,RN2711

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

(Transistor with Built-in Bias Resistor)

RN2710, RN2711

Unit: mm

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

z Including two devices in USV (ultra super mini type with 5 leads)

z With built-in bias resistors

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN1710 and RN1711

Equivalent Circuit

USV

JEDEC

―

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

JEITA

TOSHIBA

2-2L1A

Characteristic

Symbol

Rating

Unit

Weight: 6.2 mg (typ.)

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

CBO

CEO

EBO

−50

−5

Collector current

−100

200

°C

Collector power dissipation

Junction temperature

Storage temperature range

P *

150

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

* : Total rating

Equivalent Circuit (Top View)

Start of commercial production

1992-01

2014-03-01

12 3 4 5 6

中文翻译

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与RN2711(TE85L,F)相关器件

型号	品牌	获取价格	描述	数据表
RN2711JE	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2711JE(TE85L)	TOSHIBA	获取价格	RN2711JE(TE85L)
RN2711JE(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR
RN2711TE85L	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN2711TE85R	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN2712JE	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2712JE(TE85L)	TOSHIBA	获取价格	RN2712JE(TE85L)
RN2712JE(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR
RN2712JE(TPL3)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR
RN2713JE	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

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