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RN2901(TE85R) PDF预览

RN2901(TE85R)

更新时间： 2024-09-16 15:49:47
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
7页 569K
描述
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, 6 PIN, BIP General Purpose Small Signal

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中文翻译

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RN2901(TE85R) 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active包装说明：SMALL OUTLINE, R-PDSO-G6
针数：6Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.75
风险等级：5.77其他特性：BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：30
JESD-30 代码：R-PDSO-G6JESD-609代码：e0
元件数量：2端子数量：6
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：240极性/信道类型：PNP
认证状态：Not Qualified表面贴装：YES
端子面层：TIN LEAD端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：200 MHzBase Number Matches：1

RN2901(TE85R) 数据手册

 浏览型号RN2901(TE85R)的Datasheet PDF文件第2页浏览型号RN2901(TE85R)的Datasheet PDF文件第3页浏览型号RN2901(TE85R)的Datasheet PDF文件第4页浏览型号RN2901(TE85R)的Datasheet PDF文件第5页浏览型号RN2901(TE85R)的Datasheet PDF文件第6页浏览型号RN2901(TE85R)的Datasheet PDF文件第7页 
RN2901~RN2906  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)  
RN2901,RN2902,RN2903,RN2904,RN2905,RN2906  
Switching, Inverter Circuit, Interface Circuit  
and Driver Circuit Applications  
Unit : mm  
z Including two devices in US6 (ultra super mini type with 6 leads)  
z With built-in bias resistors  
z Simplify circuit design  
z Reduce a quantity of parts and manufacturing process  
z Complementary to RN1901 to RN1906  
Equivalent Circuit and Bias Resistor Values  
Type No.  
R1 (kΩ)  
R2 (kΩ)  
RN2901  
RN2902  
RN2903  
RN2904  
RN2905  
RN2906  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
22  
US6  
47  
JEDEC  
―
―
2.2  
4.7  
JEITA  
2-2J1A  
TOSHIBA  
Weight: 6.8 mg (typ.)  
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)  
Equivalent Circuit  
(Top View)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
−50  
−50  
V
V
CBO  
CEO  
RN2901 to 2906  
Collector-emitter voltage  
RN2901 to 2904  
RN2905, 2906  
−10  
Emitter-base voltage  
V
V
EBO  
−5  
Collector current  
I
−100  
200  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P *  
C
RN2901 to 2906  
T
150  
j
T
stg  
−55~150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
* : Total rating  
1
2010-07-09  
1234567

中文翻译

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