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RN2901FS PDF预览

RN2901FS

更新时间： 2024-11-04 12:23:03
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体开关小信号双极晶体管光电二极管驱动
页数 文件大小 规格书
8页 177K
描述
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

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中文翻译

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RN2901FS 技术参数

生命周期：Lifetime Buy包装说明：SMALL OUTLINE, R-PDSO-F6
针数：6Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：5.46其他特性：BUILT-IN BIAS RESISTANCE RATIO IS 1
最大集电极电流 (IC)：0.05 A集电极-发射极最大电压：20 V
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：30
JESD-30 代码：R-PDSO-F6JESD-609代码：e0
元件数量：2端子数量：6
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：PNP最大功率耗散 (Abs)：0.05 W
认证状态：Not Qualified子类别：BIP General Purpose Small Signal
表面贴装：YES端子面层：TIN LEAD
端子形式：FLAT端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

RN2901FS 数据手册

 浏览型号RN2901FS的Datasheet PDF文件第2页浏览型号RN2901FS的Datasheet PDF文件第3页浏览型号RN2901FS的Datasheet PDF文件第4页浏览型号RN2901FS的Datasheet PDF文件第5页浏览型号RN2901FS的Datasheet PDF文件第6页浏览型号RN2901FS的Datasheet PDF文件第7页 
RN2901FS~RN2906FS  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)  
RN2901FS,RN2902FS,RN2903FS  
RN2904FS,RN2905FS,RN2906FS  
Switching, Inverter Circuit, Interface Circuit and  
Driver Circuit Applications  
Unit: mm  
1.0±0.05  
0.8±0.05  
0.1±0.05  
0.1±0.05  
•
Two devices are incorporated into a fine pitch small mold (6-pin)  
package.  
1
6
5
•
•
Incorporating a bias resistor into a transistor reduces parts count.  
Reducing the parts count enables the manufacture of ever more  
compact equipment and lowers assembly cost.  
2
4
3
Complementary to RN1901FS~RN1906FS  
Equivalent Circuit and Bias Resistor Values  
1.EMITTER1  
2.BASE1  
(E1)  
(B1)  
(C2)  
(E2)  
(B2)  
(C1)  
3.COLLECTOR2  
4.EMITTER2  
5.BASE2  
C
Type No.  
R1 (kΩ)  
R2 (kΩ)  
6.COLLECTOR1  
fS6  
RN2901FS  
RN2902FS  
RN2903FS  
RN2904FS  
RN2905FS  
RN2906FS  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
R1  
B
JEDEC  
JEITA  
―
22  
―
47  
E
TOSHIBA  
2-1F1D  
2.2  
4.7  
Weight: 0.001g (typ.)  
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)  
Equivalent Circuit  
Characteristics  
Symbol  
Rating  
Unit  
(top view)  
Collector-base voltage  
V
V
−20  
−20  
V
V
CBO  
CEO  
6
5
4
RN2901FS~2906FS  
Collector-emitter voltage  
Emitter-base voltage  
RN2901FS~2904FS  
RN2905FS, 2906FS  
−10  
V
V
EBO  
Q2  
3
Q1  
1
−5  
Collector current  
I
−50  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
(Note 1)  
50  
C
2
RN2901FS~2906FS  
T
150  
j
T
stg  
−55~150  
°C  
Note:  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Total rating  
1
2007-11-01  
12345678

中文翻译

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