5秒后页面跳转
RN2901FE(TE85L) PDF预览

RN2901FE(TE85L)

更新时间: 2024-11-05 07:58:55
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
8页 554K
描述
RN2901FE(TE85L)

RN2901FE(TE85L) 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Base Number Matches:1

RN2901FE(TE85L) 数据手册

 浏览型号RN2901FE(TE85L)的Datasheet PDF文件第2页浏览型号RN2901FE(TE85L)的Datasheet PDF文件第3页浏览型号RN2901FE(TE85L)的Datasheet PDF文件第4页浏览型号RN2901FE(TE85L)的Datasheet PDF文件第5页浏览型号RN2901FE(TE85L)的Datasheet PDF文件第6页浏览型号RN2901FE(TE85L)的Datasheet PDF文件第7页 
RN2901FE~RN2906FE  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)  
RN2901FE,RN2902FE,RN2903FE  
RN2904FE,RN2905FE,RN2906FE  
Switching, Inverter Circuit, Interface Circuit and  
Unit: mm  
Driver Circuit Applications  
Two devices are incorporated into an Extreme-Super-Mini (6-pin)  
package.  
Incorporating a bias resistor into a transistor reduces parts count.  
Reducing the parts count enables the manufacture of ever more  
compact equipment and lowers assembly cost.  
Complementary to RN1901FE~RN1906FE  
Equivalent Circuit and Bias Resistor Values  
C
Type No.  
R1 (kΩ)  
R2 (kΩ)  
RN2901FE  
RN2902FE  
RN2903FE  
RN2904FE  
RN2905FE  
RN2906FE  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
R1  
B
22  
JEDEC  
JEITA  
47  
E
2.2  
4.7  
TOSHIBA  
2-2N1G  
Weight:0.003 g (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
(Q1, Q2 common)  
Equivalent Circuit  
(top view)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
6
5
4
V
V
50  
50  
V
V
CBO  
CEO  
RN2901FE~  
RN2906FE  
Collector-emitter voltage  
RN2901FE~  
RN2904FE  
Q2  
3
10  
5  
Q1  
Emitter-base voltage  
V
C
V
EBO  
RN2905FE,  
RN2906FE  
1
2
Collector current  
I
100  
100  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
(Note 1)  
RN2901FE~  
RN2906FE  
T
150  
j
T
55~150  
°C  
stg  
Note:  
Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to  
decrease in the reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Total rating  
1
2007-11-01  

与RN2901FE(TE85L)相关器件

型号 品牌 获取价格 描述 数据表
RN2901FE(TE85L,F) TOSHIBA

获取价格

PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP
RN2901FE(TPL3) TOSHIBA

获取价格

PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP
RN2901FE(TPL3,F) TOSHIBA

获取价格

PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP
RN2901FS TOSHIBA

获取价格

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2901TE85L TOSHIBA

获取价格

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN2901TE85R TOSHIBA

获取价格

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN2902 TOSHIBA

获取价格

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2902(TE85L) TOSHIBA

获取价格

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, 6 PIN,
RN2902(TE85L,F) TOSHIBA

获取价格

PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP
RN2902,LF(CT TOSHIBA

获取价格

TRANS 2PNP PREBIAS 0.2W US6