Datasheet > RN2714,LF

RN2714,LF

更新时间： 2024-11-04 21:18:39

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
4页	298K
描述
Small Signal Bipolar Transistor

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技术参数
数据手册

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RN2714,LF 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	Factory Lead Time：	12 weeks
风险等级：	5.78	Base Number Matches：	1

RN2714,LF 数据手册

RN2714

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)

RN2714

Unit: mm

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

 Two devices incorporated in a USV (5-pin ultra-super-mini-type)

 Built-in bias resistors

 Simplified circuit design

 Reduced quantity of parts and manufacturing process

Equivalent Circuit

R1: 1.0 kΩ (Q1, Q2 common)

R2: 10 kΩ (Q1, Q2 common)

USV

JEDEC

―

Absolute Maximum Ratings (Ta = 25˚C) (Q1, Q2 common)

JEITA

TOSHIBA

2-2L1A

Characteristic

Symbol

Rating

Unit

Weight: 6.2 mg (typ.)

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

CBO

CEO

EBO

-50

-5

Collector current

-100

200

°C

Collector power dissipation

Junction temperature

Storage temperature range

P (Note 1)

150

-55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

Equivalent Circuit (top view)

Start of commercial production

2000-02

2017-03-24

12 3 4

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