Datasheet > RN2712JE(TE85L)

RN2712JE(TE85L)

更新时间： 2024-09-15 15:49:47

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	255K
描述
RN2712JE(TE85L)

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中文翻译

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技术参数
数据手册

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RN2712JE(TE85L) 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

RN2712JE(TE85L) 数据手册

RN2712JE,RN2713JE

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2712JE, RN2713JE

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

Unit : mm

z Two devices are incorporated into an Extreme-Super-Mini (5 pin)

package.

z Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enables the manufacture of ever more compact

equipment and lowers assembly cost.

z A wide range of resistor values is available for use in various circuits.

Equivalent Circuit

1.BASE1

(B1)

2.EMITTER

3.BASE2

4.COLLECTOR2

5.COLLECTOR1

(E)

(B2)

(C2)

(C1)

JEDEC

―

Absolute Maximum Ratings (Ta = 25°C)

JEITA

―

TOSHIBA

2-2P1D

Characteristic

Collector-base voltage

Symbol

Rating

Unit

Weight: 0.003g(typ.)

CBO

CEO

EBO

−50

Collector-emitter voltage

Emitter-base voltage

−5

Collector current

−100

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

P *

150

stg

−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*: Total rating

Equivalent Circuit

(top view)

2007-11-01

12 3 4 5 6

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