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RN2901 PDF预览

RN2901

更新时间: 2024-11-03 22:43:51
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体小信号双极晶体管开关光电二极管PC
页数 文件大小 规格书
7页 271K
描述
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2901 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.45其他特性:BUILT-IN RESISTOR RATIO IS 1
最大集电极电流 (IC):0.1 A基于收集器的最大容量:6 pF
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):30JESD-30 代码:R-PDSO-G6
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):0.2 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
VCEsat-Max:0.3 VBase Number Matches:1

RN2901 数据手册

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RN2901~RN2906  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)  
RN2901,RN2902,RN2903,RN2904,RN2905,RN2906  
Switching, Inverter Circuit, Interface Circuit  
And Driver Circuit Applications  
Unit in mm  
l Including two devices in US6 (ultra super mini type with 6 leads)  
l With built-in bias resistors  
l Simplify circuit design  
l Reduce a quantity of parts and manufacturing process  
l Complementary to RN1901~RN1906  
Equivalent Circuit and Bias Resistor Values  
Type No.  
R1 (k)  
R2 (k)  
RN2901  
RN2902  
RN2903  
RN2904  
RN2905  
RN2906  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
22  
47  
2.2  
4.7  
JEDEC  
EIAJ  
2-2J1A  
TOSHIBA  
Weight: 6.8mg  
Equivalent Circuit (Top View)  
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
50  
50  
V
V
CBO  
CEO  
RN2901~2906  
Collector-emitter voltage  
RN2901~2904  
RN2905, 2906  
10  
Emitter-base voltage  
V
V
EBO  
5  
Collector current  
I
100  
200  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
* : Total rating  
P
*
C
RN2901~2906  
T
150  
j
T
55~150  
°C  
stg  
1
2001-06-05  

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