Datasheet > RN2712JE(TE85L,F)

RN2712JE(TE85L,F)

更新时间： 2024-09-15 20:00:35

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
6页	274K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR

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技术参数
数据手册

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RN2712JE(TE85L,F) 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	1.8	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	120	元件数量：	2
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.1 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

RN2712JE(TE85L,F) 数据手册

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RN2712JE,RN2713JE

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN2712JE, RN2713JE

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

Unit : mm

z Two devices are incorporated into an Extreme-Super-Mini (5 pin)

package.

z Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enables the manufacture of ever more compact

equipment and lowers assembly cost.

z A wide range of resistor values is available for use in various circuits.

Equivalent Circuit

1.BASE1

2.EMITTER

3.BASE2

4.COLLECTOR2

5.COLLECTOR1

(B1)

(E)

(B2)

(C2)

(C1)

JEDEC

―

JEITA

―

Absolute Maximum Ratings (Ta = 25°C)

TOSHIBA

2-2P1D

Weight: 0.003g(typ.)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−50

Collector-emitter voltage

Emitter-base voltage

−5

Collector current

−100

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

P *

150

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*: Total rating

Equivalent Circuit

(top view)

Start of commercial production

2001-06

2014-03-01

12 3 4 5 6

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与RN2712JE(TE85L,F)相关器件

型号	品牌	获取价格	描述	数据表
RN2712JE(TPL3)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR
RN2713JE	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2713JE(TE85L)	TOSHIBA	获取价格	RN2713JE(TE85L)
RN2713JE(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR
RN2713JE(TPL3)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR
RN2713JE(TPL3,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR
RN2714	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2L1A, 5 PIN, BIP G
RN2714,LF	TOSHIBA	获取价格	Small Signal Bipolar Transistor
RN2731B110W	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| 12A I(C) \| FO-91VAR
RN2901	TOSHIBA	获取价格	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

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