Datasheet > RN2711JE

RN2711JE

更新时间： 2024-09-15 12:23:03

品牌	Logo	应用领域
东芝 - TOSHIBA		开关驱动
页数	文件大小	规格书
6页	290K
描述
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

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中文翻译

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数据手册

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RN2711JE 数据手册

RN2710JE,RN2711JE

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)

RN2710JE, RN2711JE

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

Unit: mm

• Two devices are incorporated into an Extreme-Super-Mini (5-pin)

package.

• Incorporating a bias resistor into a transistor reduces parts count.

• Reducing the parts count enables the manufacture of ever more

compact

equipment and lowers assembly cost.

• A wide range of resistor values are available for use in various circuit

designs.

• Complementary to RN1710JE, RN1711JE

1.BASE1

2.EMITTER

3.BASE2

4.COLLECTOR2

5.COLLECTOR1

(B1)

(E)

(B2)

(C2)

(C1)

Equivalent Circuit and Bias Resistor Values

JEDEC

JEITA

―

TOSHIBA

2-2P1D

Weight: 0.003g (typ.)

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)

Equivalent Circuit

(top view)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−50

Collector-emitter voltage

Emitter-base voltage

−5

Collector current

−100

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

(Note 1)

150

stg

−55~150

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling Precautions”/“Derating

Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1:

Total rating

2007-11-01

12 3 4 5 6

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