Datasheet > RN2710TE85R

RN2710TE85R

更新时间： 2024-11-04 15:49:47

品牌	Logo	应用领域
东芝 - TOSHIBA		开关光电二极管晶体管
页数	文件大小	规格书
6页	309K
描述
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

RN2710TE85R 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G5
Reach Compliance Code：	unknown	风险等级：	5.77
最大集电极电流 (IC)：	0.1 A	基于收集器的最大容量：	6 pF
集电极-发射极最大电压：	50 V	配置：	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：	120	JESD-30 代码：	R-PDSO-G5
元件数量：	2	端子数量：	5
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	PNP	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	200 MHz
VCEsat-Max：	0.3 V	Base Number Matches：	1

RN2710TE85R 数据手册

RN2710,RN2711

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

(Transistor with Built-in Bias Resistor)

RN2710,RN2711

Unit: mm

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

z Including two devices in USV (ultra super mini type with 5 leads)

z With built-in bias resistors

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN1710 and RN1711

Equivalent Circuit

USV

JEDEC

―

JEITA

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

TOSHIBA

2-2L1A

Weight: 6.2 mg (typ.)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

CBO

CEO

EBO

−50

−5

Collector current

−100

200

°C

Collector power dissipation

Junction temperature

Storage temperature range

P *

150

stg

−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

* : Total rating

Equivalent Circuit (Top View)

2010-12-13

12 3 4 5 6

中文翻译

下载PDF

与RN2710TE85R相关器件

型号	品牌	获取价格	描述	数据表
RN2711	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN2711(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353
RN2711JE	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2711JE(TE85L)	TOSHIBA	获取价格	RN2711JE(TE85L)
RN2711JE(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR
RN2711TE85L	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN2711TE85R	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN2712JE	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2712JE(TE85L)	TOSHIBA	获取价格	RN2712JE(TE85L)
RN2712JE(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR

与RN2710TE85R相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

7
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

30

产品中心

服务支持

精选活动

关于我们

帮助中心

RN2710TE85R

RN2710TE85R 技术参数

RN2710TE85R 数据手册

与RN2710TE85R相关器件

与RN2710TE85R相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

RN2710TE85R

RN2710TE85R 技术参数

RN2710TE85R 数据手册

与RN2710TE85R相关器件

与RN2710TE85R相关文章

您还可以找

您在本页遇到什么问题？