Datasheet > RN2710JE(TE85L,F)

RN2710JE(TE85L,F)

更新时间： 2024-09-15 20:44:51

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
6页	283K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR

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中文翻译

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技术参数
数据手册
替代型号

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RN2710JE(TE85L,F) 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.78	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	120	元件数量：	2
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.1 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

RN2710JE(TE85L,F) 数据手册

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RN2710JE,RN2711JE

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)

RN2710JE, RN2711JE

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

Unit: mm

• Two devices are incorporated into an Extreme-Super-Mini (5-pin)

package.

• Incorporating a bias resistor into a transistor reduces parts count.

• Reducing the parts count enables the manufacture of ever more

compact

equipment and lowers assembly cost.

• A wide range of resistor values are available for use in various circuit

designs.

• Complementary to RN1710JE, RN1711JE

1.BASE1

2.EMITTER

3.BASE2

4.COLLECTOR2

5.COLLECTOR1

(B1)

(E)

(B2)

(C2)

(C1)

Equivalent Circuit

JEDEC

JEITA

―

TOSHIBA

2-2P1D

Weight: 0.003g (typ.)

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)

Equivalent Circuit

(top view)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−50

Collector-emitter voltage

Emitter-base voltage

−5

Collector current

−100

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

(Note 1)

150

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling Precautions”/“Derating

Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

Note 1:

Total rating

2000-06

2014-03-01

12 3 4 5 6

中文翻译

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RN2710JE(TE85L,F) 替代型号

型号	品牌	替代类型	描述	数据表
EMA3T2R	ROHM	功能相似	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, ROHS CO

与RN2710JE(TE85L,F)相关器件

型号	品牌	获取价格	描述	数据表
RN2710JE(TPL3)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR
RN2710JE(TPL3,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR
RN2710TE85R	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN2711	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN2711(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353
RN2711JE	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2711JE(TE85L)	TOSHIBA	获取价格	RN2711JE(TE85L)
RN2711JE(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR
RN2711TE85L	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN2711TE85R	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose

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