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RN2710JE(TE85L,F) PDF预览

RN2710JE(TE85L,F)

更新时间： 2024-11-04 20:44:51
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体管
页数 文件大小 规格书
6页 283K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR

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中文翻译

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RN2710JE(TE85L,F) 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：,Reach Compliance Code：unknown
风险等级：5.78最大集电极电流 (IC)：0.1 A
最小直流电流增益 (hFE)：120元件数量：2
极性/信道类型：PNP最大功率耗散 (Abs)：0.1 W
子类别：BIP General Purpose Small Signal表面贴装：YES
晶体管元件材料：SILICONBase Number Matches：1

RN2710JE(TE85L,F) 数据手册

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RN2710JE,RN2711JE  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)  
RN2710JE, RN2711JE  
Switching, Inverter Circuit, Interface Circuit and  
Driver Circuit Applications  
Unit: mm  
• Two devices are incorporated into an Extreme-Super-Mini (5-pin)  
package.  
• Incorporating a bias resistor into a transistor reduces parts count.  
• Reducing the parts count enables the manufacture of ever more  
compact  
equipment and lowers assembly cost.  
• A wide range of resistor values are available for use in various circuit  
designs.  
• Complementary to RN1710JE, RN1711JE  
1.BASE1  
2.EMITTER  
3.BASE2  
4.COLLECTOR2  
5.COLLECTOR1  
(B1)  
(E)  
(B2)  
(C2)  
(C1)  
Equivalent Circuit  
C
JEDEC  
JEITA  
―
R1  
B
―
TOSHIBA  
2-2P1D  
Weight: 0.003g (typ.)  
E
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)  
Equivalent Circuit  
(top view)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
5
4
V
CBO  
V
CEO  
V
EBO  
−50  
−50  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Q1  
Q2  
−5  
V
Collector current  
I
−100  
100  
mA  
mW  
°C  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
(Note 1)  
C
1
2
3
T
150  
j
T
stg  
−55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature,  
etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba  
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating  
Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Start of commercial production  
Note 1:  
Total rating  
2000-06  
1
2014-03-01  
123456

中文翻译

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RN2710JE(TE85L,F) 替代型号

型号 品牌 替代类型 描述 数据表
EMA3T2R ROHM

功能相似

 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, ROHS CO

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