Datasheet > RN1108FS(TPL3)

RN1108FS(TPL3)

更新时间： 2024-11-21 19:54:15

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
6页	129K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),SMT

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中文翻译

获取价格

技术参数
数据手册

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RN1108FS(TPL3) 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	最大集电极电流 (IC)：	0.05 A
最小直流电流增益 (hFE)：	120	元件数量：	1
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.05 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

RN1108FS(TPL3) 数据手册

RN1107FS~RN1109FS

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1107FS,RN1108FS,RN1109FS

Switching, Inverter Circuit, Interface Circuit and

Unit: mm

Driver Circuit Applications

•

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enable the manufacture of ever more

compact equipment and save assembly cost.

Complementary to RN2107FS~RN2109FS

0.8±0.05

1.0±0.05

Equivalent Circuit and Bias Resistor Values

0.1±0.05

Type No.

R1 (kΩ)

R2 (kΩ)

RN1107FS

RN1108FS

RN1109FS

0.1±0.05

1.BASE

2.EMITTER

fSM

3.COLLECOTR

JEDEC

JEITA

―

TOSHIBA

2-1E1A

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2

common)

Weight: 0.0006 g (typ.)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

RN1107FS~

RN1109FS

Collector-emitter voltage

RN1107FS

RN1108FS

RN1109FS

Emitter-base voltage

EBO

Collector current

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN1107FS~

RN1109FS

150

−55~150

stg

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2007-11-01

12 3 4 5 6

中文翻译

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与RN1108FS(TPL3)相关器件

型号	品牌	获取价格	描述	数据表
RN1108FT	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, THIN, TESM, 2-1B1A, 3 PIN, BIP
RN1108MFV	TOSHIBA	获取价格	暂无描述
RN1108MFV(TL3MAA)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
RN1109	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1109(T5L,F,T)	TOSHIBA	获取价格	Small Signal Bipolar Transistor
RN1109(TE85L)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SSM, 2-2H1A, 3 PIN, BIP General
RN1109(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416
RN1109(TE85R)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SSM, 2-2H1A, 3 PIN, BIP General
RN1109ACT	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1109CT	TOSHIBA	获取价格	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver

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