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RN1106FV PDF预览

RN1106FV

更新时间: 2024-11-02 13:12:59
品牌 Logo 应用领域
东芝 - TOSHIBA 开关驱动
页数 文件大小 规格书
8页 562K
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RN1106FV 数据手册

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RN1101RN1106  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1101, RN1102, RN1103,  
RN1104, RN1105, RN1106  
Switching, Inverter Circuit, Interface Circuit  
and Driver Circuit Applications  
Unit: mm  
z With built-in bias resistors  
z Simplified circuit design  
z Reduced number of parts and simplified manufacturing process  
z Complementary to RN2101~ RN2106  
Equivalent Circuit and Bias Resister Values  
Type No.  
R1 (k)  
R2 (k)  
RN1101  
RN1102  
RN1103  
RN1104  
RN1105  
RN1106  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
22  
47  
2.2  
4.7  
JEDEC  
EIAJ  
TOSHIBA  
Weight: 2.4 mg  
2-2H1A  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
50  
50  
V
V
CBO  
CEO  
RN1101~1106  
Collector-emitter voltage  
RN1101~1104  
RN1105, 1106  
10  
Emitter-base voltage  
V
V
EBO  
5
Collector current  
I
100  
100  
150  
55~150  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
C
RN1101~1106  
T
j
T
stg  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2007-11-01  

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