Datasheet > RN1106MFV(TL3PAV)

RN1106MFV(TL3PAV)

更新时间： 2024-11-26 10:56:35

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
8页	1034K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

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RN1101MFV∼RN1106MFV

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1101MFV, RN1102MFV, RN1103MFV

RN1104MFV, RN1105MFV, RN1106MFV

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

Unit: mm

1.2 ± 0.05

z Ultra-small package, suited to very high density mounting

0.80 ± 0.05

z Incorporating a bias resistor into the transistor reduces the number of parts,

so enabling the manufacture of ever more compact equipment and

lowering assembly cost.

z A wide range of resistor values is available for use in various circuits.

z Complementary to the RN2101MFV to RN2106MFV

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN1101MFV

RN1102MFV

RN1103MFV

RN1104MFV

RN1105MFV

RN1106MFV

4.7

1. BASE

2. EMITTER

3. COLLECTOR

2.2

4.7

VESM

JEDEC

JEITA

―

2-1L1A

TOSHIBA

Weight: 1.5 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

CBO

CEO

RN1101MFV to 1106MFV

Collector-emitter voltage

RN1101MFV to 1104MFV

Emitter-base voltage

EBO

RN1105MFV, 1106MFV

Collector current

100

°C

Collector power dissipation

RN1101MFV to 1106MFV

Junction temperature

P (Note 1)

150

Storage temperature range

stg

−55 to 150

°C

Note:Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant

change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the

operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm)

0.5

Pad Dimension（Reference）

Unit: mm

0.45

1.15

0.4

0.45

Start of commercial production

2005-02

0.4

2014-03-01

12 3 4 5 6 7 8

中文翻译

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与RN1106MFV(TL3PAV)相关器件

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RN1107(TE85R)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SSM, 2-2H1A, 3 PIN, BIP General
RN1107_07	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1107ACT	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
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RN1107FV	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1E1A, VESM, 3 PIN, BIP Genera

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