Datasheet > RN1107(TE85R)

RN1107(TE85R)

更新时间： 2024-09-29 21:06:23

品牌	Logo	应用领域
东芝 - TOSHIBA		开关光电二极管晶体管
页数	文件大小	规格书
6页	335K
描述
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SSM, 2-2H1A, 3 PIN, BIP General Purpose Small Signal

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技术参数
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RN1107(TE85R) 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G3
针数：	3	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.21.00.75
风险等级：	5.48	其他特性：	BUILT-IN BIAS RESISTOR RATIO IS 0.213
最大集电极电流 (IC)：	0.1 A	集电极-发射极最大电压：	50 V
配置：	SINGLE WITH BUILT-IN RESISTOR	最小直流电流增益 (hFE)：	80
JESD-30 代码：	R-PDSO-G3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	250 MHz
Base Number Matches：	1

RN1107(TE85R) 数据手册

RN1107~1109

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1107, RN1108, RN1109

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Unit: mm

z With built-in bias resistors.

z Simplified circuit design

z Reduced number of parts and simplified manufacturing process

z Complementary to RN2107 to 2109

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN1107

RN1108

RN1109

JEDEC

―

JEITA

TOSHIBA

2-2H1A

Weight: 2.4mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

RN1107 to 1109

RN1107

CBO

CEO

Collector-emitter voltage

Emitter-base voltage

RN1108

EBO

RN1109

Collector current

RN1107 to 1109

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

100

150

stg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2010-04-06

12 3 4 5 6

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与RN1107(TE85R)相关器件

型号	品牌	获取价格	描述	数据表
RN1107_07	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1107ACT	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1107CT	TOSHIBA	获取价格	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver
RN1107F	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SOT-416
RN1107FS	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1107FV	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1E1A, VESM, 3 PIN, BIP Genera
RN1107MFV	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, ULTRA SMALL, VESM, 2-1L1A, 3 PI
RN1107MFV(TL3MAA)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
RN1107MFV(TPL3)	TOSHIBA	获取价格	Digital Transistors 100mA 50volts 3Pin 10K x 47Kohms
RN1108	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

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