Datasheet > RN1106FV(TPL3)

RN1106FV(TPL3)

更新时间： 2024-11-02 15:49:47

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
8页	527K
描述
Small Signal Bipolar Transistor

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技术参数
数据手册

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RN1106FV(TPL3) 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.71
Base Number Matches：	1

RN1106FV(TPL3) 数据手册

RN1101FV∼RN1106FV

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1101FV, RN1102FV, RN1103FV

RN1104FV, RN1105FV, RN1106FV

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

Unit in mm

ꢀ

Ultra-small package, suited to very high density mounting

1.2 ± 0.05

ꢀ

Incorporating bias resistance into the transistor reduces the number of

parts, so enabling the manufacture of ever more compact equipment and

lowering assembly cost.

0.80 ± 0.05

ꢀ

A wide range of resistor values is available for use in various circuits.

Complementary to RN2101FV~RN2106FV

Equivalent Circuit and Bias Resister Values

Type No.

R1 (kΩ)

R2 (kΩ)

1.BASE

2.EMITTER

3.COLLECTOR

RN1101FV

RN1102FV

RN1103FV

RN1104FV

RN1105FV

RN1106FV

4.7

VESM

JEDEC

JEITA

―

2-1L1A

TOSHIBA

2.2

4.7

Weight: 0.0015 g(typ.)

Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

CBO

CEO

RN1101FV~1106FV

Collector-emitter voltage

Emitter-base voltage

RN1101FV~1104FV

RN1105FV, 1106FV

EBO

Collector current

100

150

−55~150

°C

Collector power dissipation

Junction temperature

Storage temperature range

P (Note)

RN1101FV~1106FV

stg

°C

Note : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mmt)

0.5mm

0.45mm

0.4mm

2004-06-07

12 3 4 5 6 7 8

中文翻译

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