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RN1106MFV PDF预览

RN1106MFV

更新时间: 2024-11-21 04:07:47
品牌 Logo 应用领域
东芝 - TOSHIBA 开关驱动
页数 文件大小 规格书
8页 205K
描述
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN1106MFV 数据手册

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RN1101MFVRN1106MFV  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1101MFV,RN1102MFV,RN1103MFV  
RN1104MFV,RN1105MFV,RN1106MFV  
Switching, Inverter Circuit, Interface Circuit and  
Driver Circuit Applications  
Unit: mm  
Ultra-small package, suited to very high density mounting  
1.2 ± 0.05  
Incorporating a bias resistor into the transistor reduces the number of parts,  
so enabling the manufacture of ever more compact equipment and  
lowering assembly cost.  
0.80 ± 0.05  
1
A wide range of resistor values is available for use in various circuits.  
Complementary to the RN2101MFV~RN2106MFV  
Lead (Pb) - free  
3
2
Equivalent Circuit and Bias Resistor Values  
Type No.  
R1 (k)  
R2 (k)  
RN1101MFV  
RN1102MFV  
RN1103MFV  
RN1104MFV  
RN1105MFV  
RN1106MFV  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
22  
1. BASE  
47  
2. EMITTER  
VESM  
3. COLLECTOR  
2.2  
4.7  
JEDEC  
JEITA  
2-1L1A  
TOSHIBA  
Weight: 0.0015 g (typ.)  
Maximum Ratings  
(Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
V
V
50  
50  
V
V
CBO  
CEO  
RN1101MFV~1106MFV  
RN1101MFV~1104MFV  
RN1105MFV, 1106MFV  
10  
Emitter-base voltage  
V
V
EBO  
5
Collector current  
I
100  
150  
150  
55~150  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P (Note)  
C
RN1101MFV~1106MFV  
T
j
T
stg  
°C  
Note: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)  
0.5  
0.45  
1.15  
0.4  
0.45  
0.4  
0.4  
2005-03-30  
1

RN1106MFV 替代型号

型号 品牌 替代类型 描述 数据表
RN1106MFV(TPL3) TOSHIBA

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TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416