Datasheet > RN1106FV(TPL3)

RN1106FV(TPL3)

更新时间： 2024-11-25 15:49:47

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
8页	527K
描述
Small Signal Bipolar Transistor

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

RN1106FV(TPL3) 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.71
Base Number Matches：	1

RN1106FV(TPL3) 数据手册

RN1101FV∼RN1106FV

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1101FV, RN1102FV, RN1103FV

RN1104FV, RN1105FV, RN1106FV

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

Unit in mm

ꢀ

Ultra-small package, suited to very high density mounting

1.2 ± 0.05

ꢀ

Incorporating bias resistance into the transistor reduces the number of

parts, so enabling the manufacture of ever more compact equipment and

lowering assembly cost.

0.80 ± 0.05

ꢀ

A wide range of resistor values is available for use in various circuits.

Complementary to RN2101FV~RN2106FV

Equivalent Circuit and Bias Resister Values

Type No.

R1 (kΩ)

R2 (kΩ)

1.BASE

2.EMITTER

3.COLLECTOR

RN1101FV

RN1102FV

RN1103FV

RN1104FV

RN1105FV

RN1106FV

4.7

VESM

JEDEC

JEITA

―

2-1L1A

TOSHIBA

2.2

4.7

Weight: 0.0015 g(typ.)

Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

CBO

CEO

RN1101FV~1106FV

Collector-emitter voltage

Emitter-base voltage

RN1101FV~1104FV

RN1105FV, 1106FV

EBO

Collector current

100

150

−55~150

°C

Collector power dissipation

Junction temperature

Storage temperature range

P (Note)

RN1101FV~1106FV

stg

°C

Note : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mmt)

0.5mm

0.45mm

0.4mm

2004-06-07

12 3 4 5 6 7 8

中文翻译

下载PDF

与RN1106FV(TPL3)相关器件

型号	品牌	获取价格	描述	数据表
RN1106MFV	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1106MFV(TL3MAA)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
RN1106MFV(TL3PAV)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
RN1106MFV(TPL3)	TOSHIBA	获取价格	Digital Transistors 100mA 50volts 3Pin 4.7K x 47Kohms
RN1107	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1107(T5L,F,T)	TOSHIBA	获取价格	Small Signal Bipolar Transistor
RN1107(TE85R)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SSM, 2-2H1A, 3 PIN, BIP General
RN1107_07	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1107ACT	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1107CT	TOSHIBA	获取价格	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver