是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PSSO-G4 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.67 |
雪崩能效等级(Eas): | 227.5 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 100 A | 最大漏源导通电阻: | 0.004 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | MO-235 |
JESD-30 代码: | R-PSSO-G4 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 512 A | 参考标准: | IEC-60134 |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PSMN3R0-30YLDX | NXP |
获取价格 |
PSMN3R0-30YLD - N-channel 30 V, 3.0 mΩ logic | |
PSMN3R0-60BS | NXP |
获取价格 |
N-channel 60 V 3.2 mΩ standard level MOSFET | |
PSMN3R0-60BS | NEXPERIA |
获取价格 |
N-channel 60 V 3.2 mΩ standard level MOSFET i | |
PSMN3R0-60PS | NXP |
获取价格 |
N-channel 60 V 3.0 mΩ standard level MOSFET | |
PSMN3R0-60PS | NEXPERIA |
获取价格 |
N-channel 60 V 3.0 mΩ standard level MOSFETPr | |
PSMN3R0-60PS,127 | NXP |
获取价格 |
PSMN3R0-60PS - N-channel 60 V 3.0 mΩ standard | |
PSMN3R2-25YLC | NXP |
获取价格 |
N-channel 25 V 3.4 mΩ logic level MOSFET in L | |
PSMN3R2-30YLC | NXP |
获取价格 |
NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8) | |
PSMN3R2-40YLB | NEXPERIA |
获取价格 |
N-channel 40 V, 3.3 mOhm, 120 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 | |
PSMN3R2-40YLD | NEXPERIA |
获取价格 |
N-channel 40 V, 3.3 mΩ, 120 A logic level MOS |