Datasheet > PSMN3R3-80BS,118

PSMN3R3-80BS,118

更新时间： 2024-09-16 20:09:39

品牌	Logo	应用领域
恩智浦 - NXP		开关脉冲晶体管
页数	文件大小	规格书
14页	198K
描述
PSMN3R3-80BS - N-channel 80 V, 3.5 mΩ standard level MOSFET in D2PAK D2PAK 3-Pin

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数据手册

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PSMN3R3-80BS,118 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
零件包装代码：	D2PAK	针数：	3
Reach Compliance Code：	not_compliant	风险等级：	5.74
Base Number Matches：	1

PSMN3R3-80BS,118 数据手册

PSMN3R3-80BS

D2P

N-channel 80 V, 3.5 mΩ standard level MOSFET in D2PAK

Rev. 2 — 29 February 2012

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

 High efficiency due to low switching

 Suitable for standard level gate drive

and conduction losses

1.3 Applications

 DC-to-DC converters

 Load switch

 Motor control

 Server power supplies

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

T_mb= 25 °C; V_GS= 10 V; see Figure 1

[1]

I_D

120

306

P_tot

total power dissipation T_mb= 25 °C; see Figure 2

junction temperature

T_j

-55

175 °C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 25 A; T_j= 25 °C; see Figure 13

3.5

mΩ

V_GS= 10 V; I_D= 25 A; T_j= 100 °C; see Figure 12;

see Figure 13

4.95 5.8

mΩ

Dynamic characteristics

Q_GD

gate-drain charge

total gate charge

V_GS= 10 V; I_D= 75 A; V_DS= 40 V; see Figure 14;

see Figure 15

Q_G(tot)

111

Avalanche ruggedness

E_DS(AL)Snon-repetitive

V_GS= 10 V; T_j(init)= 25 °C; I_D= 120 A;

676 mJ

drain-source

V_sup≤ 80 V; R_GS= 50 Ω; unclamped

avalanche energy

[1] Continuous current is limited by package.

12 3 4 5 6 7...14

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