Datasheet > PSMN3R4-30BL,118

PSMN3R4-30BL,118

更新时间： 2024-11-06 22:57:35

品牌	Logo	应用领域
其他 - ETC		开关脉冲晶体管
页数	文件大小	规格书
15页	808K
描述
MOSFET N-CH 30V 100A D2PAK

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

PSMN3R4-30BL,118 数据手册

PSMN3R4-30BL

N-channel 30 V 3.3 mΩ logic level MOSFET in D2PAK

Rev. 1 — 22 March 2012

Product data sheet

1. Product profile

1.1 General description

Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

 High efficiency due to low switching

 Suitable for logic level gate drive

and conduction losses

sources

1.3 Applications

 DC-to-DC converters

 Load switching

 Motor control

 Server power supplies

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

[1]

I_D

T_mb= 25 °C; V_GS= 10 V;

see Figure 1

100

P_tot

T_j

total power dissipation

junction temperature

T_mb= 25 °C; see Figure 2

114

175

-55

°C

Static characteristics

R_DSon

drain-source on-state resistance V_GS= 10 V; I_D= 25 A; T_j= 100 °C;

see Figure 12; see Figure 13

3.91

2.79

4.6

3.3

mΩ

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

see Figure 13

Dynamic characteristics

Q_GD

gate-drain charge

total gate charge

V_GS= 4.5 V; I_D= 25 A; V_DS= 15 V;

see Figure 14; see Figure 15

Q_G(tot)

Avalanche ruggedness

E_DS(AL)Snon-repetitive drain-source

avalanche energy

V_GS= 10 V; T_j(init)= 25 °C;

I_D= 100 A; V_sup≤ 30 V; R_GS= 50 Ω;

unclamped

200

[1] Continuous current is limited by package.

12 3 4 5 6 7...15

中文翻译

下载PDF

与PSMN3R4-30BL,118相关器件

型号	品牌	获取价格	描述	数据表
PSMN3R4-30BLE	NEXPERIA	获取价格	N-channel 30 V 3.4 mΩ logic level MOSFET in D
PSMN3R4-30PL	NEXPERIA	获取价格	N-channel 30 V 3.4 mΩ logic level MOSFETProdu
PSMN3R5-25MLD	NEXPERIA	获取价格	N-channel 25 V, 3.72 mΩ logic level MOSFET in
PSMN3R5-30LL	NXP	获取价格	N-channel DFN3333-8 30 V 3.6 mΩ logic level M
PSMN3R5-30LL_11	NXP	获取价格	N-channel DFN3333-8 30 V 3.6 mΩ logic level M
PSMN3R5-30YL	NXP	获取价格	N-channel TrenchMOS logic level FET
PSMN3R5-30YL_09	NXP	获取价格	N-channel TrenchMOS logic level FET
PSMN3R5-40YSB	NEXPERIA	获取价格	N-channel 40 V, 3.5 mOhm, 120 A standard level MOSFET in LFPAK56 using optimized NextPower
PSMN3R5-40YSD	NEXPERIA	获取价格	N-channel 40 V, 3.5 mΩ, 120 A standard level
PSMN3R5-80ES	NXP	获取价格	N-channel 80 V, 3.5 mΩ standard level MOSFET