Datasheet > PSMN3R4-30PL

PSMN3R4-30PL

更新时间： 2024-11-07 11:13:23

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
15页	814K
描述
N-channel 30 V 3.4 mΩ logic level MOSFETProduction

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PSMN3R4-30PL 数据手册

PSMN3R4-30PL

N-channel 30 V 3.4 mΩ logic level MOSFET

Rev. 01 — 2 November 2010

Product data sheet

1. Product profile

1.1 General description

Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

High efficiency due to low switching

Suitable for logic level gate drive

and conduction losses

sources

1.3 Applications

DC-to-DC converters

Load switching

Motor control

Server power supplies

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source voltage T_j≥ 25 °C; T_j≤ 175 °C

[1]

I_D

drain current

T_mb= 25 °C; V_GS= 10 V;

see Figure 1

100

P_tot

T_j

total power

dissipation

T_mb= 25 °C; see Figure 2

114

junction temperature

-55

175 °C

Static characteristics

R_DSondrain-source on-state V_GS= 4.5 V; I_D= 10 A;

resistance T_j= 25 °C; see Figure 13

_GS= 10 V; I_D= 10 A;

3.5

2.8

4.1

3.4

mΩ

[2]

mΩ

T_j= 25 °C; see Figure 13

Dynamic characteristics

Q_GD

gate-drain charge

total gate charge

V_GS= 4.5 V; I_D= 25 A;

V_DS= 15 V; see Figure 14;

Q_G(tot)

see Figure 15

Avalanche ruggedness

E_DS(AL)Snon-repetitive

_GS= 10 V; T_j(init)= 25 °C;

200 mJ

drain-source

avalanche energy

I_D= 100 A; V_sup≤ 30 V;

R_GS= 50 Ω; unclamped

12 3 4 5 6 7...15

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