Datasheet > PSMN3R9-100YSF

PSMN3R9-100YSF

更新时间： 2024-11-10 11:15:55

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	305K
描述
NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E packageProduction

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PSMN3R9-100YSF 数据手册

PSMN3R9-100YSF

NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in

LFPAK56E package

11 June 2021

Product data sheet

1. General description

NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for

industrial and consumer applications.

2. Features and benefits

•

Low Q_rrfor higher efficiency and lower spiking

•

120 A I_D(max) – demonstrated continuous current rating

Low Q_G× R_DSonFOM for high efficiency switching applications

Strong avalanche energy rating (E_as)

Avalanche rated and 100% tested

Ha-free and RoHS compliant LFPAK56E package

3. Applications

•

Synchronous rectifier in AC-DC and DC-DC

Primary side switch – 48 V DC-DC

BLDC motor control

USB-PD adapters

Full-bridge and half-bridge applications

Flyback and resonant topologies

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

I_D

Parameter

Conditions

Min

Typ

Max

100

120

294

175

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 2

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

junction temperature

T_j

-55

°C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

Fig. 12

3.3

5.1

4.3

6.9

mΩ

V_GS= 10 V; I_D= 25 A; T_j= 100 °C;

Fig. 13

Dynamic characteristics

Q_GD

gate-drain charge

total gate charge

I_D= 25 A; V_DS= 50 V; V_GS= 10 V;

Fig. 14; Fig. 15

Q_G(tot)

120

Avalanche ruggedness

E_DS(AL)Snon-repetitive drain-

I_D= 52.6 A; V_sup≤ 100 V; R_GS= 50 Ω; [1]

V_GS= 10 V; T_j(init)= 25 °C; unclamped;

t_p= 95 µs; Fig. 4

325

source avalanche

energy

12 3 4 5 6 7...13

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