Datasheet > PSMN4R1-30YLC

PSMN4R1-30YLC

更新时间： 2024-11-10 11:09:35

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	745K
描述
N-channel 30 V 4.35mΩ logic level MOSFET in LFPAK using NextPower technologyProduction

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PSMN4R1-30YLC 数据手册

PSMN4R1-30YLC

N-channel 30 V 4.35mΩ logic level MOSFET in LFPAK using

NextPower technology

12 February 2013

Product data sheet

1. General description

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product

is designed and qualified for use in a wide range of industrial, communications and

domestic equipment.

2. Features and benefits

High reliability Power SO8 package, qualified to 175°C

Low parasitic inductance and resistance

Optimised for 4.5V Gate drive utilising NextPower Superjunction technology

Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads

•

3. Applications

DC-to-DC converters

Load switching

Power OR-ing

Server power supplies

Sync rectifier

•

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_DS

I_D

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

T_mb= 25 °C; V_GS= 10 V; Fig. 1

P_tot

T_j

total power dissipation T_mb= 25 °C; Fig. 2

junction temperature

-55

175

°C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 4.5 V; I_D= 20 A; T_j= 25 °C;

Fig. 12

4.75

3.65

5.7

mΩ

V_GS= 10 V; I_D= 20 A; T_j= 25 °C;

Fig. 12

4.35

Dynamic characteristics

Q_GDgate-drain charge

V_GS= 4.5 V; I_D= 20 A; V_DS= 15 V;

Fig. 14; Fig. 15

3.5

12 3 4 5 6 7...14

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