Datasheet > PSMN4R3-100ES,127

PSMN4R3-100ES,127

更新时间： 2024-09-16 21:16:27

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
14页	195K
描述
PSMN4R3-100ES - N-channel 100 V 4.3 mΩ standard level MOSFET in I2PAK TO-262 3-Pin

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PSMN4R3-100ES,127 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	TO-262
针数：	3	Reach Compliance Code：	not_compliant
风险等级：	5.74	Base Number Matches：	1

PSMN4R3-100ES,127 数据手册

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PSMN4R3-100ES

I2P

N-channel 100 V 4.3 mΩ standard level MOSFET in I2PAK

Rev. 1 — 31 October 2011

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product

is designed and qualified for use in a wide range of industrial, communications and

domestic equipment.

1.2 Features and benefits

 High efficiency due to low switching

 Suitable for standard level gate drive

and conduction losses

sources

1.3 Applications

 DC-to-DC converters

 Load switching

 Motor control

 Server power supplies

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min

Typ

Max

100

120

338

175

Unit

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

T_mb= 25 °C; V_GS= 10 V; see Figure 1

T_mb= 25 °C; see Figure 2

[1]

I_D

P_tot

total power dissipation

junction temperature

T_j

-55

°C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 25 A; T_j= 100 °C;

see Figure 12; see Figure 13

6.6

3.7

7.8

4.3

mΩ

[2]

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

see Figure 13

Dynamic characteristics

Q_GD

gate-drain charge

total gate charge

V_GS= 10 V; I_D= 75 A; V_DS= 50 V;

see Figure 14; see Figure 15

Q_G(tot)

170

Avalanche ruggedness

E_DS(AL)Snon-repetitive drain-source

avalanche energy

V_GS= 10 V; T_j(init)= 25 °C; I_D= 120 A;

V_sup≤ 100 V; R_GS= 50 Ω; Unclamped

537

[1] Continuous current limited by package

[2] Measured 3 mm from package.

12 3 4 5 6 7...14

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