是否Rohs认证: | 符合 | 生命周期: | Transferred |
零件包装代码: | TO-220AB | 包装说明: | PLASTIC, SC-46, 3 PIN |
针数: | 3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.74 |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 100 A |
最大漏源导通电阻: | 0.0046 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT APPLICABLE | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 565 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT APPLICABLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PSMN4R6-60PS,127 | NXP |
获取价格 |
PSMN4R6-60PS - N-channel 60 V, 4.6 mΩ standar | |
PSMN4R8-100BSE | NXP |
获取价格 |
120A, 100V, 0.0048ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3/2 | |
PSMN4R8-100BSE | NEXPERIA |
获取价格 |
N-channel 100 V 4.8 mΩ standard level MOSFET | |
PSMN4R8-100BSEJ | NXP |
获取价格 |
PSMN4R8-100BSE - N-channel 100 V 4.8 mΩ stand | |
PSMN4R8-100PSE | NEXPERIA |
获取价格 |
N-channel 100 V 5 mΩ standard level MOSFET wi | |
PSMN4R8-100YSE | NEXPERIA |
获取价格 |
N-channel 100 V, 4.8 mOhm MOSFET with enhanced SOA in LFPAK56EProduction | |
PSMN5R0-100ES | NXP |
获取价格 |
N-channel 100 V 5 mΩ standard level MOSFET in | |
PSMN5R0-100PS | NXP |
获取价格 |
N-channel 100 V 5 mΩ standard level MOSFET in | |
PSMN5R0-100PS | NEXPERIA |
获取价格 |
N-channel 100 V 5 mΩ standard level MOSFET in | |
PSMN5R0-100PS,127 | NXP |
获取价格 |
PSMN5R0-100PS - N-channel 100 V 5 mΩ standard |