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PSMN4R6-60PS PDF预览

PSMN4R6-60PS

更新时间: 2024-11-25 06:05:35
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
14页 251K
描述
N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220

PSMN4R6-60PS 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TO-220AB包装说明:PLASTIC, SC-46, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.74
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):100 A
最大漏源导通电阻:0.0046 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):565 A认证状态:Not Qualified
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

PSMN4R6-60PS 数据手册

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PSMN4R6-60PS  
N-channel 60 V, 4.6 mstandard level MOSFET in TO220  
Rev. 01 — 11 March 2010  
Product data sheet  
1. Product profile  
1.1 General description  
Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product  
is designed and qualified for use in a wide range of industrial, communications and  
domestic equipment.  
1.2 Features and benefits  
„ High efficiency due to low switching  
„ Suitable for standard level gate drive  
and conduction losses  
sources  
1.3 Applications  
„ DC-to-DC converters  
„ Load switching  
„ Motor control  
„ Server power supplies  
1.4 Quick reference data  
Table 1.  
Quick reference  
Symbol Parameter  
Conditions  
drain-source voltage Tj 25 °C; Tj 175 °C  
Min  
Typ  
Max Unit  
VDS  
ID  
-
-
-
-
-
-
60  
V
[1]  
drain current  
Tmb = 25 °C; see Figure 1  
Tmb = 25 °C; see Figure 2  
100  
211  
A
Ptot  
total power  
dissipation  
W
Tj  
junction temperature  
-55  
-
175  
°C  
Dynamic characteristics  
QGD  
gate-drain charge  
total gate charge  
VGS = 10 V; ID = 25 A;  
VDS = 30 V; see Figure 14  
and 15  
-
-
14.8  
70.8  
-
-
nC  
nC  
QG(tot)  
Static characteristics  
RDSon  
drain-source  
on-state resistance  
VGS = 10 V; ID = 25 A;  
Tj = 175 °C; see Figure 12  
-
-
8.4  
3.5  
11.5 mΩ  
4.6 mΩ  
VGS = 10 V; ID = 25 A;  
Tj = 25 °C; see Figure 13  
[1] Continuous current is limited by package.  

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