Datasheet > PSMN5R0-100PS,127

PSMN5R0-100PS,127

更新时间： 2024-11-25 20:05:19

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
15页	209K
描述
PSMN5R0-100PS - N-channel 100 V 5 mΩ standard level MOSFET in TO-220 TO-220 3-Pin

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PSMN5R0-100PS,127 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	TO-220
针数：	3	Reach Compliance Code：	not_compliant
风险等级：	5.74	Base Number Matches：	1

PSMN5R0-100PS,127 数据手册

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PSMN5R0-100PS

O-220AB

N-channel 100 V 5 mΩ standard level MOSFET in TO-220

Rev. 3 — 26 September 2011

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product

is designed and qualified for use in a wide range of industrial, communications and

domestic equipment.

1.2 Features and benefits

 High efficiency due to low switching

 Suitable for standard level gate drive

and conduction losses

sources

1.3 Applications

 DC-to-DC converters

 Load switching

 Motor control

 Server power supplies

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

100

120

[1]

I_D

T_mb= 25 °C; V_GS= 10 V;

see Figure 1

P_tot

T_j

total power dissipation T_mb= 25 °C; see Figure 2

junction temperature

338

-55

175 °C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 25 A;

T_j= 100 °C; see Figure 12;

see Figure 13

7.7

4.3

mΩ

[2]

_GS= 10 V; I_D= 25 A;

mΩ

T_j= 25 °C; see Figure 13

Dynamic characteristics

Q_GD

gate-drain charge

total gate charge

V_GS= 10 V; I_D= 75 A;

V_DS= 50 V; see Figure 14;

Q_G(tot)

170

see Figure 15

Avalanche ruggedness

E_DS(AL)Snon-repetitive

drain-source avalanche I_D= 120 A; V_sup≤ 100 V;

energy R_GS= 50 Ω; Unclamped

_GS= 10 V; T_j(init)= 25 °C;

537 mJ

12 3 4 5 6 7...15

中文翻译

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