Datasheet > PSMN5R5-60YS

PSMN5R5-60YS

更新时间： 2024-11-25 10:00:23

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管开关
页数	文件大小	规格书
15页	252K
描述
N-channel LFPAK 60 V, 5.2 mΩ standard level FET

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PSMN5R5-60YS 数据手册

PSMN5R5-60YS

N-channel LFPAK 60 V, 5.2 mΩ standard level FET

Rev. 02 — 24 December 2009

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

Advanced TrenchMOS provides low

Improved mechanical and thermal

RDSon and low gate charge

characteristics

High efficiency in switching power

LFPAK provides maximum power

converters

density in a Power SO8 package

1.3 Applications

DC-to-DC converters

Lithium-ion battery protection

Load switching

Motor control

Server power supplies

1.4 Quick reference data

Table 1.

Quick reference

Symbol Parameter

Conditions

drain-source voltage T_j≥ 25 °C; T_j≤ 175 °C

Min

Typ

Max Unit

V_DS

I_D

[1]

drain current

T_mb= 25 °C; see Figure 1

T_mb= 25 °C; see Figure 2

100

130

P_tot

total power

dissipation

T_j

junction temperature

-55

175

170

°C

Avalanche ruggedness

E_DS(AL)Snon-repetitive

drain-source

V_GS= 10 V; T_j(init)= 25 °C;

I_D= 100 A; V_sup≤ 60 V;

R_GS= 50 Ω; unclamped

avalanche energy

Dynamic characteristics

Q_GD

gate-drain charge

total gate charge

V_GS= 10 V; I_D= 75 A;

V_DS= 30 V; see Figure 14

and 15

11.2

Q_G(tot)

12 3 4 5 6 7...15

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PSMN5R5-60YS 替代型号

型号	品牌	替代类型	描述	数据表
SI7164DP-T1-GE3	VISHAY	功能相似	N-Channel 60-V (D-S) MOSFET

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