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PSMN5R0-100PS PDF预览

PSMN5R0-100PS

更新时间: 2024-11-26 11:16:03
品牌 Logo 应用领域
安世 - NEXPERIA 局域网开关脉冲晶体管
页数 文件大小 规格书
15页 811K
描述
N-channel 100 V 5 mΩ standard level MOSFET in TO-220Production

PSMN5R0-100PS 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:not_compliant
风险等级:5.69Is Samacsys:N
雪崩能效等级(Eas):537 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (ID):120 A最大漏源导通电阻:0.005 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):680 A表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PSMN5R0-100PS 数据手册

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PSMN5R0-100PS  
N-channel 100 V 5 mstandard level MOSFET in TO-220  
Rev. 3 — 26 September 2011  
Product data sheet  
1. Product profile  
1.1 General description  
Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product  
is designed and qualified for use in a wide range of industrial, communications and  
domestic equipment.  
1.2 Features and benefits  
High efficiency due to low switching  
Suitable for standard level gate drive  
and conduction losses  
sources  
1.3 Applications  
DC-to-DC converters  
Load switching  
Motor control  
Server power supplies  
1.4 Quick reference data  
Table 1.  
Symbol  
VDS  
Quick reference data  
Parameter  
Conditions  
Min Typ Max Unit  
drain-source voltage  
drain current  
Tj 25 °C; Tj 175 °C  
-
-
-
-
100  
120  
V
A
[1]  
ID  
Tmb = 25 °C; VGS = 10 V;  
see Figure 1  
Ptot  
Tj  
total power dissipation Tmb = 25 °C; see Figure 2  
junction temperature  
-
-
-
338  
W
-55  
175 °C  
Static characteristics  
RDSon drain-source on-state  
resistance  
VGS = 10 V; ID = 25 A;  
Tj = 100 °C; see Figure 12;  
see Figure 13  
-
-
7.7  
4.3  
9
5
mΩ  
[2]  
V
GS = 10 V; ID = 25 A;  
mΩ  
Tj = 25 °C; see Figure 13  
Dynamic characteristics  
QGD  
gate-drain charge  
total gate charge  
VGS = 10 V; ID = 75 A;  
-
-
49  
-
-
nC  
nC  
VDS = 50 V; see Figure 14;  
QG(tot)  
170  
see Figure 15  
Avalanche ruggedness  
EDS(AL)S non-repetitive  
drain-source avalanche ID = 120 A; Vsup 100 V;  
energy RGS = 50 ; Unclamped  
V
GS = 10 V; Tj(init) = 25 °C;  
-
-
537 mJ  

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