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PSMN4R6-60BS PDF预览

PSMN4R6-60BS

更新时间: 2024-11-26 11:10:55
品牌 Logo 应用领域
安世 - NEXPERIA 开关脉冲晶体管
页数 文件大小 规格书
15页 808K
描述
N-channel 60 V, 4.4 mΩ standard level MOSFET in D2PAKProduction

PSMN4R6-60BS 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.38
雪崩能效等级(Eas):266 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):100 A最大漏源导通电阻:0.0044 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):565 A参考标准:IEC-60134
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

PSMN4R6-60BS 数据手册

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PSMN4R6-60BS  
N-channel 60 V, 4.4 mstandard level MOSFET in D2PAK  
Rev. 1 — 22 March 2012  
Product data sheet  
1. Product profile  
1.1 General description  
Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product  
is designed and qualified for use in a wide range of industrial, communications and  
domestic equipment.  
1.2 Features and benefits  
High efficiency due to low switching  
Suitable for standard level gate drive  
and conduction losses  
sources  
1.3 Applications  
DC-to-DC converters  
Load switching  
Motor control  
Server power supplies  
1.4 Quick reference data  
Table 1.  
Symbol  
VDS  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
60  
Unit  
V
drain-source voltage  
drain current  
Tj 25 °C; Tj 175 °C  
Tmb = 25 °C; see Figure 1  
Tmb = 25 °C; see Figure 2  
-
-
-
-
-
[1]  
ID  
-
100  
211  
175  
A
Ptot  
total power dissipation  
junction temperature  
-
W
Tj  
-55  
°C  
Static characteristics  
RDSon drain-source on-state  
resistance  
VGS = 10 V; ID = 25 A; Tj = 100 °C; see  
Figure 12; see Figure 13  
-
-
5.98  
3.74  
7
mΩ  
mΩ  
VGS = 10 V; ID = 25 A; Tj = 25 °C;  
see Figure 13  
4.4  
Dynamic characteristics  
QGD  
gate-drain charge  
total gate charge  
VGS = 10 V; ID = 25 A; VDS = 30 V;  
see Figure 14; see Figure 15  
-
-
14.8  
70.8  
-
-
nC  
nC  
QG(tot)  
Avalanche ruggedness  
EDS(AL)S non-repetitive drain-source  
avalanche energy  
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;  
Vsup 60 V; RGS = 50 ; unclamped  
-
-
266  
mJ  
[1] Continuous current is limited by package.  

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