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PSMN4R4-80PS,127 PDF预览

PSMN4R4-80PS,127

更新时间: 2024-11-25 15:48:27
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
13页 196K
描述
PSMN4R4-80PS - N-channel 80 V, 4.1 mΩ standard level FET TO-220 3-Pin

PSMN4R4-80PS,127 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TO-220针数:3
Reach Compliance Code:not_compliant风险等级:5.75
Base Number Matches:1

PSMN4R4-80PS,127 数据手册

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PSMN4R4-80PS  
N-channel 80 V, 4.1 mstandard level FET  
Rev. 01 — 18 June 2009  
Product data sheet  
1. Product profile  
1.1 General description  
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic  
package using TrenchMOS technology. This product is designed and qualified for use in  
computing, communications, consumer and industrial applications only.  
1.2 Features and benefits  
„ Low conduction losses due to low  
„ Suitable for standard level gate drive  
on-state resistance  
sources  
1.3 Applications  
„ DC - DC converters  
„ Load switch  
„ Motor control  
„ Server power supplies  
1.4 Quick reference data  
Table 1.  
Quick reference  
Symbol Parameter  
Conditions  
Min  
Typ  
Max Unit  
ID  
drain current  
Tmb = 25 °C; VGS = 10 V;  
see Figure 1; see Figure 3  
-
-
100  
A
Ptot  
total power  
dissipation  
Tmb = 25 °C; see Figure 2  
-
-
-
306  
W
Dynamic characteristics  
QGD gate-drain charge  
VGS = 10 V; ID = 80 A;  
VDS = 40 V; see Figure 14;  
see Figure 15  
25  
-
nC  
Static characteristics  
RDSon  
drain-source  
on-state resistance  
VGS = 10 V; ID = 15 A;  
Tj = 25 °C; see Figure 6;  
see Figure 13  
[1]  
-
3.3  
4.1  
m  
[1] Measured 3 mm from package.  
 
 
 
 
 
 

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