Datasheet > PSMN4R2-60PL

PSMN4R2-60PL

更新时间： 2024-09-17 11:12:19

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	728K
描述
N-channel 60 V, 3.9 mΩ logic level MOSFET in SOT78Production

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PSMN4R2-60PL 数据手册

PSMN4R2-60PL

N-channel 60 V, 3.9 mΩ logic level MOSFET in SOT78

5 February 2013

Product data sheet

1. General description

Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design

and manufacture has been optimized for use in battery operated power tools.

2. Features and benefits

High efficiency due to low switching & conduction losses

Robust construction for demanding applications

Logic level gate

•

3. Applications

Battery-powered tools

Load switching

Motor control

•

Uninterruptible power supplies

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_DS

I_D

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 1

[1]

130

263

P_tot

total power dissipation T_mb= 25 °C; Fig. 2

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

Q_G(tot)total gate charge

Q_GDgate-drain charge

Avalanche ruggedness

E_DS(AL)Snon-repetitive drain-

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

Fig. 11

3.17

3.9

mΩ

V_GS= 10 V; I_D= 25 A; V_DS= 48 V;

Fig. 13; Fig. 14

151

I_D= 130 A; V_sup≤ 60 V; R_GS= 50 Ω;

V_GS= 10 V; T_j(init)= 25 °C; unclamped;

Fig. 3

283

source avalanche

energy

[1] Continuous current is limited by package.

12 3 4 5 6 7...13

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