Datasheet > PSMN3R5-40YSD

PSMN3R5-40YSD

更新时间： 2024-09-17 11:12:43

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	283K
描述
N-channel 40 V, 3.5 mΩ, 120 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technologyProduction

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中文翻译

获取价格

技术参数
数据手册

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PSMN3R5-40YSD 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	1.52	JESD-609代码：	e3
湿度敏感等级：	1	端子面层：	Tin (Sn)
Base Number Matches：	1

PSMN3R5-40YSD 数据手册

PSMN3R5-40YSD

N-channel 40 V, 3.5 mΩ, 120 A standard level MOSFET in

LFPAK56 using NextPower-S3 Schottky-Plus technology

2 October 2018

Product data sheet

1. General description

120 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56

package using advanced TrenchMOS Superjunction technology. This product has been designed

and qualified for high performance power switching applications.

2. Features and benefits

•

120 A capability

•

Avalanche rated, 100% tested at I_(AS)= 120 A

NextPower-S3 technology delivers 'superfast switching with soft recovery'

Low Q_RR, Q_Gand Q_GDfor high system efficiency and low EMI designs

Schottky-Plus body-diode, gives soft switching without the associated high I_DSSleakage

Low V_SDSchottky-like body-diode

Tighter V_GS(th)limits for improved paralleling

Wide Safe Operating Area (SOA) for reliable linear mode operation

High reliability LFPAK (Power SO8) package, copper-clip, solder die attach and qualified to

175 °C

•

Exposed leads can be wave soldered, visual solder joint inspection and high quality solder

joints

3. Applications

•

Synchronous rectification

DC-to-DC converters

High performance and high efficiency power supplies

BLDC motor control

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

I_D

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 2

[1]

120

115

175

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

junction temperature

T_j

-55

°C

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

Fig. 10

3.5

mΩ

12 3 4 5 6 7...13

中文翻译

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