Datasheet > PSMN3R7-100BSE

PSMN3R7-100BSE

更新时间： 2024-11-07 11:10:55

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	286K
描述
N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAKProduction

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PSMN3R7-100BSE 数据手册

PSMN3R7-100BSE

N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK

3 September 2018

Product data sheet

1. General description

Standard level gate drive N-channel enhancement mode MOSFET in a D2PAK package qualified

to 175 °C. Part of Nexperia's "NextPower Live" portfolio, the PSMN3R7-100BSE delivers very low

R_DSonand a very strong linear-mode (SOA) performance.

PSMN3R7-100BSE complements the latest "hot-swap" controllers - robust enough to withstand

substantial inrush currents during turn on, low R_DSonto minimize I²R losses and deliver optimum

efficiency when turned fully ON.

2. Features and benefits

•

Fully optimized Safe Operating Area (SOA) for superior linear mode operation

Low R_DSonfor low I²R conduction losses

3. Applications

•

Hot swap

Load switch

Soft start

E-fuse

Telecommunication systems based on a 48 V backplane/supply rail

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

I_D

Parameter

Conditions

Min

Typ

Max

100

120

780

405

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 2

pulsed; t_p≤ 10 µs; T_mb= 25 °C; Fig. 3

[1]

I_DM

peak drain current

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

Fig. 12

3.36

3.95

mΩ

Q_GD

gate-drain charge

total gate charge

I_D= 25 A; V_DS= 50 V; V_GS= 10 V;

Fig. 14; Fig. 15

45.2

176

Q_G(tot)

246

Avalanche ruggedness

E_DS(AL)Snon-repetitive drain-

I_D= 120 A; V_sup≤ 100 V; R_GS= 50 Ω;

V_GS= 10 V; T_j(init)= 25 °C; unclamped;

Fig. 4

542

source avalanche

energy

[1] Continuous current is limited by package

12 3 4 5 6 7...12

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