Datasheet > PSMN3R8-100BS

PSMN3R8-100BS

更新时间： 2024-11-07 11:14:47

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	981K
描述
N-channel 100 V 3.9 mΩ standard level MOSFET in D2PAKProduction

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PSMN3R8-100BS 数据手册

PSMN3R8-100BS

N-channel 100 V 3.9 mΩ standard level MOSFET in D2PAK

Rev. 2 — 29 February 2012

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product

is designed and qualified for use in a wide range of industrial, communications and

domestic equipment.

1.2 Features and benefits

 High efficiency due to low switching

 Suitable for standard level gate drive

and conduction losses

sources

1.3 Applications

 DC-to-DC converters

 Load switching

 Motor control

 Server power supplies

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min

Typ

Max

100

120

306

175

Unit

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

T_mb= 25 °C; V_GS= 10 V; see Figure 1

[1]

I_D

P_tot

total power dissipation T_mb= 25 °C; see Figure 2

junction temperature

T_j

-55

°C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 25 A; T_j= 100 °C;

see Figure 12; see Figure 13

5.9

6.9

3.9

mΩ

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

see Figure 12; see Figure 13

3.28

Dynamic characteristics

Q_GD

gate-drain charge

total gate charge

V_GS= 10 V; I_D= 75 A; V_DS= 50 V;

see Figure 14; see Figure 15

Q_G(tot)

170

Avalanche ruggedness

E_DS(AL)Snon-repetitive

V_GS= 10 V; T_j(init)= 25 °C; I_D= 120 A;

537

drain-source

V_sup≤ 100 V; R_GS= 50 Ω; Unclamped

avalanche energy

[1] Continuous current is limited by package.

12 3 4 5 6 7...14

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