Datasheet > PSMN3R5-80PS

PSMN3R5-80PS

更新时间： 2024-11-07 11:15:27

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
15页	819K
描述
N-channel 80 V, 3.5 mΩ standard level MOSFET in TO-220Production

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PSMN3R5-80PS 数据手册

PSMN3R5-80PS

N-channel 80 V, 3.5 mΩ standard level MOSFET in TO-220

Rev. 03 — 19 April 2011

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel MOSFET in TO-220 package qualified to 175C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

High efficiency due to low switching

Suitable for standard level gate drive

and conduction losses

1.3 Applications

DC-to-DC converters

Load switch

Motor control

Server power supplies

1.4 Quick reference data

Table 1.

Quick reference data

Symbol Parameter

Conditions

Min Typ Max Unit

V_DS

I_D

drain-source voltage

T_j≥ 25 °C; T_j≤ 175 °C

[1]

drain current

T_mb= 25 °C; V_GS= 10 V;

see Figure 1

120

P_tot

T_j

total power dissipation

junction temperature

T_mb= 25 °C; see Figure 2

338

-55

175 °C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 25 A;

T_j= 100 °C; see Figure 12

5.8

3.5

mΩ

[2]

V_GS= 10 V; I_D= 25 A;

mΩ

T_j= 25 °C; see Figure 13

Dynamic characteristics

Q_GD

gate-drain charge

total gate charge

V_GS= 10 V; I_D= 75 A;

V_DS= 40 V; see Figure 14;

see Figure 15

Q_G(tot)

139

Avalanche ruggedness

E_DS(AL)Snon-repetitive drain-source V_GS= 10 V; T_j(init)= 25 °C;

676 mJ

avalanche energy

I_D= 120 A; V_sup≤ 80 V;

R_GS= 50 Ω; unclamped

12 3 4 5 6 7...15

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