Datasheet > PSMN3R5-30LL_11

PSMN3R5-30LL_11

更新时间： 2024-09-16 10:00:23

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
15页	333K
描述
N-channel DFN3333-8 30 V 3.6 mΩ logic level MOSFET

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PSMN3R5-30LL_11 数据手册

PSMN3R5-30LL

N-channel DFN3333-8 30 V 3.6 mΩ logic level MOSFET

DFN3333-8

Rev. 4 — 12 December 2011

Product data sheet

1. Product profile

1.1 General description

Logic level N-channel MOSFET in DFN3333-8 package qualified to 150 °C. This product

is designed and qualified for use in a wide range of industrial, communications and power

supply equipment.

1.2 Features and benefits

 High efficiency due to low switching

 Suitable for logic level gate drive

and conduction losses

sources

 Small footprint for compact designs

1.3 Applications

 Battery protection

 Load switching

 Power ORing

 DC-to-DC converters

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 150 °C

I_D

T_mb= 25 °C; V_GS= 10 V;

see Figure 1

P_tot

T_j

total power dissipation

junction temperature

T_mb= 25 °C; see Figure 2

-55

150

°C

Static characteristics

R_DSon

drain-source on-state resistance

V_GS= 10 V; I_D= 10 A; T_j= 100 °C;

see Figure 12

mΩ

V_GS= 4.5 V; I_D= 10 A; T_j= 25 °C;

see Figure 13

4.3

5.6

3.6

_GS= 10 V; I_D= 10 A; T_j= 25 °C;

see Figure 13

Dynamic characteristics

Q_GD

gate-drain charge

V_GS= 10 V; I_D= 15 A; V_DS= 15 V;

see Figure 14; see Figure 15

12 3 4 5 6 7...15

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