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PSMN3R0-30YLDX PDF预览

PSMN3R0-30YLDX

更新时间： 2024-09-15 20:09:39
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
13页 283K
描述
PSMN3R0-30YLD - N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology SOIC 4-Pin

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中文翻译

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PSMN3R0-30YLDX 技术参数

是否Rohs认证： 符合生命周期：Transferred
零件包装代码：SOIC针数：4
Reach Compliance Code：compliant风险等级：5.73
Base Number Matches：1

PSMN3R0-30YLDX 数据手册

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6
5
K
PSMN3R0-30YLD  
N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56  
using NextPowerS3 Technology  
A
P
F
L
18 February 2014  
Product data sheet  
1. General description  
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.  
NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers  
high efficiency, low spiking performance usually associated with MOSFETs with an  
integrated Schottky or Schottky-like diode but without problematic high leakage current.  
NextPowerS3 is particularly suited to high efficiency applications at high switching  
frequencies.  
2. Features and benefits  
Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching  
frequencies  
•
Superfast switching with soft-recovery; s-factor > 1  
Low spiking and ringing for low EMI designs  
Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at  
25 °C  
•
•
•
Optimised for 4.5 V gate drive  
Low parasitic inductance and resistance  
High reliability clip bonded and solder die attach Power SO8 package; no glue, no  
wire bonds, qualified to 175 °C  
•
•
•
Wave solderable; exposed leads for optimal visual solder inspection  
•
3. Applications  
On-board DC-to-DC solutions for server and telecommunications  
Secondary-side synchronous rectification in telecommunication applications  
Voltage regulator modules (VRM)  
Point-of-Load (POL) modules  
Power delivery for V-core, ASIC, DDR, GPU, VGA and system components  
Brushed and brushless motor control  
•
•
•
•
•
•
4. Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
30  
Unit  
V
VDS  
ID  
drain-source voltage  
drain current  
25 °C ≤ Tj ≤ 175 °C  
Tmb = 25 °C; VGS = 10 V; Fig. 2  
-
-
-
-
-
-
[1]  
100  
91  
A
Ptot  
total power dissipation Tmb = 25 °C; Fig. 1  
W
Scan or click this QR code to view the latest information for this product  
 
 
 
 
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