Datasheet > PSMN3R0-60BS

PSMN3R0-60BS

更新时间： 2024-09-16 11:13:19

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
15页	805K
描述
N-channel 60 V 3.2 mΩ standard level MOSFET in D2PAKProduction

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PSMN3R0-60BS 数据手册

PSMN3R0-60BS

N-channel 60 V 3.2 mΩ standard level MOSFET in D2PAK

Rev. 1 — 22 March 2012

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product

is designed and qualified for use in a wide range of industrial, communications and

domestic equipment.

1.2 Features and benefits

 High efficiency due to low switching

 Suitable for standard level gate drive

and conduction losses

sources

1.3 Applications

 DC-to-DC converters

 Load switching

 Motor control

 Server power supplies

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

[1]

I_D

T_mb= 25 °C; V_GS= 10 V;

see Figure 1

100

P_tot

T_j

total power dissipation

junction temperature

T_mb= 25 °C; see Figure 2

306

175

-55

°C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 25 A; T_j= 100 °C;

see Figure 12; see Figure 13

4.32

2.7

5.1

3.2

mΩ

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

see Figure 13

Dynamic characteristics

Q_GD

gate-drain charge

total gate charge

V_GS= 10 V; I_D= 25 A; V_DS= 30 V;

see Figure 14; see Figure 15

Q_G(tot)

130

Avalanche ruggedness

E_DS(AL)Snon-repetitive drain-source

avalanche energy

V_GS= 10 V; T_j(init)= 25 °C;

I_D= 100 A; V_sup≤ 60 V; R_GS= 50 Ω;

unclamped

800

[1] Continuous current is limited by package

12 3 4 5 6 7...15

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