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PSMN3R3-80PS PDF预览

PSMN3R3-80PS

更新时间: 2024-11-07 11:12:51
品牌 Logo 应用领域
安世 - NEXPERIA 局域网开关脉冲晶体管
页数 文件大小 规格书
15页 803K
描述
N-channel 80 V, 3.3 mΩ standard level MOSFET in TO-220Production

PSMN3R3-80PS 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:not_compliant
风险等级:5.69雪崩能效等级(Eas):676 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:80 V最大漏极电流 (ID):120 A
最大漏源导通电阻:0.0033 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):830 A
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

PSMN3R3-80PS 数据手册

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PSMN3R3-80PS  
N-channel 80 V, 3.3 mstandard level MOSFET in TO-220  
Rev. 1 — 27 October 2011  
Product data sheet  
1. Product profile  
1.1 General description  
Standard level N-channel MOSFET in TO-220 package qualified to 175C. This product is  
designed and qualified for use in a wide range of industrial, communications and domestic  
equipment.  
1.2 Features and benefits  
High efficiency due to low switching  
Suitable for standard level gate drive  
and conduction losses  
1.3 Applications  
DC-to-DC converters  
Load switch  
Motor control  
Server power supplies  
1.4 Quick reference data  
Table 1.  
Symbol  
VDS  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
80  
Unit  
V
drain-source voltage  
drain current  
Tj 25 °C; Tj 175 °C  
Tmb = 25 °C; VGS = 10 V; see Figure 1  
Tmb = 25 °C; see Figure 2  
-
-
-
-
-
[1]  
ID  
-
120  
338  
175  
A
Ptot  
total power dissipation  
junction temperature  
-
W
Tj  
-55  
°C  
Static characteristics  
RDSon drain-source on-state  
resistance  
VGS = 10 V; ID = 25 A; Tj = 100 °C;  
see Figure 12  
-
-
4.6  
2.8  
5.4  
3.3  
mΩ  
mΩ  
[2]  
VGS = 10 V; ID = 25 A; Tj = 25 °C;  
see Figure 13  
Dynamic characteristics  
QGD  
gate-drain charge  
total gate charge  
VGS = 10 V; ID = 75 A; VDS = 40 V;  
see Figure 14; see Figure 15  
-
-
27  
-
-
nC  
nC  
QG(tot)  
139  
Avalanche ruggedness  
EDS(AL)S non-repetitive drain-source  
avalanche energy  
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;  
Vsup 80 V; RGS = 50 ; unclamped  
-
-
676  
mJ  
[1] Continuous current is limited by package.  
[2] Measured 3 mm from package.  

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