Source Url Status Check Date: | 2013-06-14 00:00:00 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | SOIC |
包装说明: | PLASTIC, LFPAK-4 | 针数: | 4 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
风险等级: | 5.73 | 雪崩能效等级(Eas): | 32 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 80 V | 最大漏极电流 (ID): | 34 A |
最大漏源导通电阻: | 0.0275 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | MO-235 | JESD-30 代码: | R-PSSO-G4 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 137 A | 参考标准: | IEC-60134 |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PSMN027-100BS | NXP |
获取价格 |
TRANSISTOR 37 A, 100 V, 0.0268 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET Ge |
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PSMN027-100BS,118 | NXP |
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PSMN027-100BS - N-channel 100V 26.8 mΩ standa |
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PSMN027-100PS | NXP |
获取价格 |
N-channel 100V 26.8 mΩ standard level MOSFET |
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PSMN027-100PS | NEXPERIA |
获取价格 |
N-channel 100V 26.8 mΩ standard level MOSFET |
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PSMN028-100HS | NEXPERIA |
获取价格 |
N-channel 100 V, 27.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technologyPr |
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PSMN028-100YS | NXP |
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N-channel LFPAK 100V 27.5 mΩ standard level M |
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PSMN028-100YS | NEXPERIA |
获取价格 |
N-channel LFPAK 100V 27.5 mΩ standard level M |
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PSMN028-100YS,115 | NXP |
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PSMN028-100YS - N-channel LFPAK 100V 27.5 mΩ |
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PSMN029-100HL | NEXPERIA |
获取价格 |
N-channel 100 V, 29 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technologyProduct |
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PSMN030-150B | NXP |
获取价格 |
N-channel TrenchMOS transistor |
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