Datasheet > PSMN027-100BS,118

PSMN027-100BS,118

更新时间： 2024-01-10 14:03:51

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
14页	211K
描述
PSMN027-100BS - N-channel 100V 26.8 mΩ standard level MOSFET in D2PAK. D2PAK 3-Pin

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技术参数
数据手册

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PSMN027-100BS,118 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	D2PAK
针数：	3	Reach Compliance Code：	not_compliant
风险等级：	5.75	Is Samacsys：	N
Base Number Matches：	1

PSMN027-100BS,118 数据手册

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PSMN027-100BS

D2P

N-channel 100V 26.8 mΩ standard level MOSFET in D2PAK.

Rev. 2 — 1 March 2012

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

 High efficiency due to low switching

 Suitable for standard level gate drive

and conduction losses

1.3 Applications

 DC-to-DC converters

 Load switching

 Motor control

 Server power supplies

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min

Typ

Max

100

Unit

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

T_mb= 25 °C; V_GS= 10 V; see Figure 1

T_mb= 25 °C; see Figure 2

I_D

P_tot

total power dissipation

junction temperature

103

175

T_j

-55

°C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 15 A; T_j= 100 °C;

see Figure 12

mΩ

V_GS= 10 V; I_D= 15 A; T_j= 25 °C;

see Figure 13

26.8

Dynamic characteristics

Q_GD

gate-drain charge

total gate charge

V_GS= 10 V; I_D= 30 A; V_DS= 50 V;

see Figure 14; see Figure 15

Q_G(tot)

Avalanche ruggedness

E_DS(AL)Snon-repetitive drain-source

avalanche energy

V_GS= 10 V; T_j(init)= 25 °C; I_D= 37 A;

V_sup≤ 100 V; unclamped; R_GS= 50 Ω

12 3 4 5 6 7...14

中文翻译

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