Datasheet > PMEG3010BEA-Q

PMEG3010BEA-Q

更新时间： 2024-09-16 11:13:19

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
10页	196K
描述
1 A low VF MEGA Schottky barrier rectifierProduction

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PMEG3010BEA-Q 数据手册

PMEG3010BEA-Q

1 A low VF MEGA Schottky barrier rectifier

25 October 2021

Product data sheet

1. General description

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated

guard ring for stress protection, encapsulated in a SOD323 (SC-76) very small Surface-Mounted

Device (SMD) plastic package.

2. Features and benefits

•

Forward current: I_F≤ 1 A

•

Reverse voltage: V_R≤ 30 V

Very low forward voltage

Very small SMD plastic package

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

High efficiency DC-to-DC conversion

Voltage clamping

Protection circuits

Low voltage rectification

Blocking diodes

Low power consumption applications

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

I_F

forward current

reverse voltage

forward voltage

reverse current

T_sp≤ 55 °C

[1]

V_R

V_F

I_R

T_j= 25 °C

I_F= 1 A; pulsed; T_j= 25 °C

V_R= 30 V; pulsed; T_j= 25 °C

[2]

450

560

150

µA

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

[2] Pulsed test: t_p≤ 300 μs; δ ≤ 0.02

12 3 4 5 6 7...10

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