Datasheet > PMEG3010BEA

PMEG3010BEA

更新时间： 2024-09-16 11:10:39

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
8页	211K
描述
1 A low VF MEGA Schottky barrier rectifierProduction

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PMEG3010BEA 数据手册

PMEG3010BEA

1 A low VF MEGA Schottky barrier rectifier

1 October 2022

Product data sheet

1. General description

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated

guard ring for stress protection, encapsulated in a SOD323 (SC-76) very small Surface-Mounted

Device (SMD) plastic package.

2. Features and benefits

•

Forward current: I_F≤ 1 A

•

Reverse voltage: V_R≤ 30 V

Very low forward voltage

Very small SMD plastic package

3. Applications

•

High efficiency DC-to-DC conversion

Voltage clamping

Protection circuits

Low voltage rectification

Blocking diodes

Low power consumption applications

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

I_F

forward current

reverse voltage

forward voltage

reverse current

T_sp≤ 55 °C

[1]

V_R

V_F

I_R

T_j= 25 °C

I_F= 1 A; pulsed; T_j= 25 °C

V_R= 30 V; pulsed; T_j= 25 °C

[2]

450

560

150

µA

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

[2] Pulsed test: t_p≤ 300 μs; δ ≤ 0.02

5. Pinning information

Table 2. Pinning information

Symbol

Description

cathode

Simplified outline

Graphic symbol

anode

sym001

SOD323

12 3 4 5 6 7 8

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