NTR4101PT1

更新时间： 2024-11-29 22:10:15

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	60K
描述
Trench Power MOSFET −20 V, Single P−Channel, SOT−23

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NTR4101PT1 数据手册

NTR4101P

Trench Power MOSFET

−20 V, Single P−Channel, SOT−23

Features

• Leading −20 V Trench for Low R

DS(on)

• −1.8 V Rated for Low Voltage Gate Drive

• SOT−23 Surface Mount for Small Footprint

• Pb−Free Package is Available

http://onsemi.com

Applications

TYP

I MAX

(BR)DSS

DS(ON)

• Load/Power Management for Portables

• Load/Power Management for Computing

• Charging Circuits and Battery Protection

70 mW @ −4.5 V

90 mW @ −2.5 V

112 mW @ −1.8 V

−20 V

−3.2 A

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

P−Channel MOSFET

Parameter

Drain−to−Source Voltage

Symbol Value

Unit

DSS

−20

±8.0

−2.4

−1.7

−3.2

0.73

Gate−to−Source Voltage

Continuous Drain

Current (Note 1)

Steady T = 25°C

State

T = 85°C

t ≤ 10 s T = 25°C

Power Dissipation

(Note 1)

Steady T = 25°C

State

t ≤ 10 s

1.25

−1.8

−1.3

0.42

MARKING DIAGRAM &

PIN ASSIGNMENT

Continuous Drain

Current (Note 2)

Steady T = 25°C

State

T = 85°C

Power Dissipation

(Note 2)

T = 25°C

Drain

Pulsed Drain Current

tp = 10 ms

−7.5

225

TR4

ESD Capability (Note 3)

C = 100 pF,

RS = 1500 W

ESD

Operating Junction and Storage Temperature

T ,

−55 to

150

°C

SOT−23

CASE 318

STYLE 21

Gate

STG

Source

Source Current (Body Diode)

−2.4

260

TR4

= Device Code

= Work Week

Lead Temperature for Soldering

Purposes (1/8” from case for 10 s)

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

ORDERING INFORMATION

†

Device

Package

Shipping

THERMAL RESISTANCE RATINGS

NTR4101PT1

SOT−23

3000/Tape & Reel

Parameter

Symbol

Max

170

100

300

Unit

NTR4101PT1G

SOT−23

Pb−Free

Junction−to−Ambient − Steady State (Note 1)

Junction−to−Ambient − t < 10 s (Note 1)

Junction−to−Ambient − Steady State (Note 2)

°C/W

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

1. Surface−mounted on FR4 board using 1 in sq pad size

(Cu area = 1.127 in sq [1 oz] including traces)

2. Surface−mounted on FR4 board using the minimum recommended pad size.

3. ESD Rating Information: HBM Class 0

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

October, 2004 − Rev. 3

NTR4101P/D

12 3 4 5 6

中文翻译

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NTR4101PT1 替代型号

型号	品牌	替代类型	描述	数据表
NTR4101PT1G	ONSEMI	类似代替	Trench Power MOSFET −20 V, Single P−Channel, SOT−23

与NTR4101PT1相关器件

型号	品牌	获取价格	描述	数据表
NTR4101PT1G	ONSEMI	获取价格	Trench Power MOSFET −20 V, Single P−Channel, SOT−23
NTR4101PT1G	TYSEMI	获取价格	Trench Power MOSFET â20 V, Single PâChann
NTR4101PT1H	TYSEMI	获取价格	Trench Power MOSFET â20 V, Single PâChann
NTR4170N	TYSEMI	获取价格	Power MOSFET 30 V, 3.2 A, Single NâChannel,
NTR4170N	ONSEMI	获取价格	Power MOSFET 30 V, 3.2 A, Single N−Channel, SOT−23
NTR4170NT	KEXIN	获取价格	N-Channel MOSFET
NTR4170NT1G	ONSEMI	获取价格	Power MOSFET 30 V, 3.2 A, Single N−Channel, SOT−23
NTR4170NT1G	TYSEMI	获取价格	Power MOSFET 30 V, 3.2 A, Single NâChannel,
NTR4170NT3G	TYSEMI	获取价格	Power MOSFET 30 V, 3.2 A, Single NâChannel,
NTR4170NT3G	ONSEMI	获取价格	Power MOSFET 30 V, 3.2 A, Single N−Channel, SOT−23

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