Datasheet > NTR4170N

NTR4170N

更新时间： 2024-09-26 06:00:39

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	101K
描述
Power MOSFET 30 V, 3.2 A, Single N−Channel, SOT−23

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NTR4170N 数据手册

NTR4170N

Power MOSFET

30 V, 3.2 A, Single N−Channel, SOT−23

Features

• Low R

DS(on)

• Low Gate Charge

• Low Threshold Voltage

• Halide Free

http://onsemi.com

MAX

I MAX

(BR)DSS

DS(on)

• This is a Pb−Free Device

55 mW @ 10 V

70 mW @ 4.5 V

110 mW @ 2.5 V

3.2 A

2.8 A

2.0 A

30 V

Applications

• Power Converters for Portables

• Battery Management

• Load/Power Switch

SIMPLIFIED SCHEMATIC − N−CHANNEL

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol Value

Unit

DSS

Gate−to−Source Voltage

Continuous Drain

Current (Note 1)

T = 25°C

3.2

2.3

4.0

0.78

t ≤ 30 s

T = 85°C

MARKING DIAGRAM/

PIN ASSIGNMENT

t ≤ 10 s T = 25°C

Power Dissipation

(Note 1)

Steady

State

Drain

T = 25°C

t ≤ 10 s

1.25

8.0

Pulsed Drain Current

t = 10 ms

°C

TREMG

Operating Junction and Storage Temperature

T ,

stg

−55 to

150

SOT−23

CASE 318

STYLE 21

Gate

Source Current (Body Diode)

0.78

260

Source

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

°C

TRE

= Specific Device Code

= Date Code

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

= Pb−Free Package

(Note: Microdot may be in either location)

THERMAL RESISTANCE RATINGS

ORDERING INFORMATION

Parameter

Symbol

Max

260

153

100

Unit

†

Device

Package

Shipping

Junction−to−Ambient − Steady State (Note 1)

Junction−to−Ambient − t ≤ 30 s

°C/W

NTR4170NT1G

SOT−23

(Pb−Free)

3000/Tape & Reel

Junction−to−Ambient − t < 10 s (Note 1)

NTR4170NT3G

SOT−23

10000/Tape & Reel

(Pb−Free)

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq

[2 oz] including traces).

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Publication Order Number:

June, 2008 − Rev. 0

NTR4170N/D

12 3 4 5

中文翻译

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与NTR4170N相关器件

型号	品牌	获取价格	描述	数据表
NTR4170NT	KEXIN	获取价格	N-Channel MOSFET
NTR4170NT1G	ONSEMI	获取价格	Power MOSFET 30 V, 3.2 A, Single N−Channel, SOT−23
NTR4170NT1G	TYSEMI	获取价格	Power MOSFET 30 V, 3.2 A, Single NâChannel,
NTR4170NT3G	TYSEMI	获取价格	Power MOSFET 30 V, 3.2 A, Single NâChannel,
NTR4170NT3G	ONSEMI	获取价格	Power MOSFET 30 V, 3.2 A, Single N−Channel, SOT−23
NTR4171P	ONSEMI	获取价格	Power MOSFET −30 V, −3.5 A, Single P−Channel, SOT−23
NTR4171P	TYSEMI	获取价格	Power MOSFET -30 V, -3.5 A, Single P-Channel, SOT-23
NTR4171PT1G	ONSEMI	获取价格	Power MOSFET −30 V, −3.5 A, Single P−Channel, SOT−23
NTR4171PT1G	TYSEMI	获取价格	Power MOSFET -30 V, -3.5 A, Single P-Channel, SOT-23
NTR4171PT1G	UMW	获取价格	种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C

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