Datasheet > NTR4171PT1G

NTR4171PT1G

更新时间： 2024-11-20 12:30:59

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	181K
描述
Power MOSFET -30 V, -3.5 A, Single P-Channel, SOT-23

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NTR4171PT1G 数据手册

Product specification

NTR4171P

Power MOSFET

MAX

I MAX

(BR)DSS

DS(on)

−30 V, −3.5 A, Single P−Channel, SOT−23

75 mW @ −10 V

110 mW @ −4.5 V

150 mW @ −2.5 V

−2.2 A

−1.8 A

−1.0 A

−30 V

Features

• Low R

at Low Gate Voltage

• Low Threshold Voltage

DS(on)

• High Power and Current Handling Capability

• This is a Pb−Free Device

P−CHANNEL MOSFET

Applications

• Load Switch

• Optimized for Battery and Load Management Applications in

Portable Equipment like Cell Phones, PDA’s, Media Players, etc.

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol Value

Unit

MARKING DIAGRAM/

PIN ASSIGNMENT

−30

DSS

Gate−to−Source Voltage

Continuous Drain

Current (Note 1)

T = 25°C

−2.2

−1.5

−3.5

0.48

Drain

Steady

State

T = 85°C

TRFMG

SOT−23

t ≤ 5 s

T = 25°C

CASE 318

STYLE 21

Power Dissipation

(Note 1)

Steady

State

Gate

T = 25°C

Source

t ≤ 5 s

1.25

TRF

= Specific Device Code

= Date Code

Pulsed Drain Current

t = 10 ms

−15.0

= Pb−Free Package

(Note: Microdot may be in either location)

Operating Junction and Storage Temperature

T ,

stg

−55 to

150

°C

Source Current (Body Diode)

−1.0

Lead Temperature for Soldering Purposes

260

°C

ORDERING INFORMATION

(1/8″ from case for 10 s)

†

Device

Package

Shipping

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

NTR4171PT1G

SOT−23

3000/Tape & Reel

(Pb−Free)

NTR4171PT3G

SOT−23

(Pb−Free)

10000/Tape & Reel

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

260

100

Unit

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Junction−to−Ambient − Steady State (Note 1)

Junction−to−Ambient − t ≤ 10 s (Note 1)

°C/W

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq

[2 oz] including traces)

http://www.twtysemi.com

sales@twtysemi.com

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与NTR4171PT1G相关器件

型号	品牌	获取价格	描述	数据表
NTR4171PT3G	ONSEMI	获取价格	Power MOSFET −30 V, −3.5 A, Single P−Channel, SOT−23
NTR4171PT3G	TYSEMI	获取价格	Power MOSFET -30 V, -3.5 A, Single P-Channel, SOT-23
NTR4171RT	UMW	获取价格	种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C
NTR4501N	TYSEMI	获取价格	Power MOSFET 20 V, 3.2 A, Single N-Channel, SOT-23 DC-DC Conversion
NTR4501N	ONSEMI	获取价格	Power MOSFET 20 V, 3.2 A, Single N−Channel, SOT−23
NTR4501NT1	ONSEMI	获取价格	Power MOSFET 20 V, 3.2 A, Single N−Channel, SOT−23
NTR4501NT1	TYSEMI	获取价格	Power MOSFET 20 V, 3.2 A, Single N-Channel, SOT-23 DC-DC Conversion
NTR4501NT1G	TYSEMI	获取价格	Power MOSFET 20 V, 3.2 A, Single N-Channel, SOT-23 DC-DC Conversion
NTR4501NT1G	ONSEMI	获取价格	Power MOSFET 20 V, 3.2 A, Single N−Channel, SOT−23
NTR4501NT1G	KEXIN	获取价格	N-Channel MOSFET

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