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NTR4170NT PDF预览

NTR4170NT

更新时间: 2024-09-27 18:10:07
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
4页 121K
描述
N-Channel MOSFET

NTR4170NT 数据手册

 浏览型号NTR4170NT的Datasheet PDF文件第2页浏览型号NTR4170NT的Datasheet PDF文件第3页浏览型号NTR4170NT的Datasheet PDF文件第4页 
SMD Type  
MOSFET  
N-Channel MOSFET  
NTR4170NT  
SOT-23  
Unit: mm  
+0.1  
-0.1  
2.9  
0.4  
+0.1  
-0.1  
Features  
3
VDS (V) = 30V  
ID = 5.8 A (VGS = 10V)  
1
2
RDS(ON)  
RDS(ON)  
RDS(ON)  
28m (VGS = 10V)  
+0.1  
-0.1  
+0.05  
-0.01  
0.95  
0.1  
+0.1  
-0.1  
33m (VGS = 4.5V)  
52m (VGS = 2.5V)  
1.9  
ƽ PbíFree Package May be Available. The GíSuffix Denotes a  
PbíFree Lead Finish  
1. Gate  
2. Source  
3. Drain  
Absolute Maximum Ratings Ta = 25  
Parameter  
Symbol  
Rating  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
30  
12  
V
5.8  
Continuous Drain Current  
TA=25  
TA=70  
ID  
A
4.9  
Pulsed Drain Current *  
Power Dissipation  
IDM  
PD  
30  
1.4  
TA=25  
TA=70  
W
1
Thermal Resistance.Junction- to-Ambient  
Thermal Resistance.Junction- to-Case  
Junction and Storage Temperature Range  
RthJA  
Rthc  
125  
60  
/W  
/W  
TJ, TSTG  
-55 to 150  
* Repetitive rating, pulse width limited by junction temperature.  
1
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