Datasheet > NTR4170N

NTR4170N

更新时间： 2024-11-18 12:03:47

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	142K
描述
Power MOSFET 30 V, 3.2 A, Single NâChannel, SOTâ23 This is a PbâFree Device

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NTR4170N 数据手册

Product specification

NTR4170N

Power MOSFET

MAX

I MAX

(BR)DSS

DS(on)

30 V, 3.2 A, Single N−Channel, SOT−23

55 mW @ 10 V

70 mW @ 4.5 V

110 mW @ 2.5 V

3.2 A

2.8 A

2.0 A

30 V

Features

• Low R

DS(on)

• Low Gate Charge

• Low Threshold Voltage

• Halide Free

SIMPLIFIED SCHEMATIC − N−CHANNEL

• This is a Pb−Free Device

Applications

• Power Converters for Portables

• Battery Management

• Load/Power Switch

MARKING DIAGRAM/

PIN ASSIGNMENT

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol Value

Unit

Drain

DSS

Gate−to−Source Voltage

TREMG

Continuous Drain

Current (Note 1)

T = 25°C

3.2

2.3

4.0

0.78

t ≤ 30 s

SOT−23

CASE 318

STYLE 21

T = 85°C

t ≤ 10 s T = 25°C

Gate

Source

Power Dissipation

(Note 1)

Steady

State

TRE

= Specific Device Code

= Date Code

= Pb−Free Package

T = 25°C

t ≤ 10 s

1.25

8.0

Pulsed Drain Current

t = 10 ms

°C

(Note: Microdot may be in either location)

Operating Junction and Storage Temperature

T ,

stg

−55 to

150

ORDERING INFORMATION

Source Current (Body Diode)

0.78

260

†

Device

Package

Shipping

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

°C

NTR4170NT1G

SOT−23

(Pb−Free)

3000/Tape & Reel

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

NTR4170NT3G

SOT−23

(Pb−Free)

10000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

260

153

100

Unit

Junction−to−Ambient − Steady State (Note 1)

Junction−to−Ambient − t ≤ 30 s

°C/W

Junction−to−Ambient − t < 10 s (Note 1)

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq

[2 oz] including traces).

http://www.twtysemi.com

sales@twtysemi.com

1 of 2

中文翻译

下载PDF

与NTR4170N相关器件

型号	品牌	获取价格	描述	数据表
NTR4170NT	KEXIN	获取价格	N-Channel MOSFET
NTR4170NT1G	ONSEMI	获取价格	Power MOSFET 30 V, 3.2 A, Single N−Channel, SOT−23
NTR4170NT1G	TYSEMI	获取价格	Power MOSFET 30 V, 3.2 A, Single NâChannel,
NTR4170NT3G	TYSEMI	获取价格	Power MOSFET 30 V, 3.2 A, Single NâChannel,
NTR4170NT3G	ONSEMI	获取价格	Power MOSFET 30 V, 3.2 A, Single N−Channel, SOT−23
NTR4171P	ONSEMI	获取价格	Power MOSFET −30 V, −3.5 A, Single P−Channel, SOT−23
NTR4171P	TYSEMI	获取价格	Power MOSFET -30 V, -3.5 A, Single P-Channel, SOT-23
NTR4171PT1G	ONSEMI	获取价格	Power MOSFET −30 V, −3.5 A, Single P−Channel, SOT−23
NTR4171PT1G	TYSEMI	获取价格	Power MOSFET -30 V, -3.5 A, Single P-Channel, SOT-23
NTR4171PT1G	UMW	获取价格	种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C

与NTR4170N相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

36

产品中心

服务支持

精选活动

关于我们

帮助中心

NTR4170N

NTR4170N 数据手册

与NTR4170N相关器件

与NTR4170N相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NTR4170N

NTR4170N 数据手册

与NTR4170N相关器件

与NTR4170N相关文章

您还可以找

您在本页遇到什么问题？