Datasheet > NTR4101PT1G

NTR4101PT1G

更新时间： 2024-11-30 12:03:47

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关光电二极管便携式便携式设备
页数	文件大小	规格书
2页	170K
描述
Trench Power MOSFET â20 V, Single PâChannel, SOTâ23 Load/Power Management for Portables

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NTR4101PT1G 数据手册

Product specification

NTR4101P, NTRV4101P

Trench Power MOSFET

−20 V, Single P−Channel, SOT−23

TYP

I MAX

(BR)DSS

DS(ON)

70 mW @ −4.5 V

90 mW @ −2.5 V

112 mW @ −1.8 V

Features

−20 V

−3.2 A

• Leading −20 V Trench for Low R

DS(on)

• −1.8 V Rated for Low Voltage Gate Drive

• SOT−23 Surface Mount for Small Footprint

P−Channel MOSFET

• NTRV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• Load/Power Management for Portables

• Load/Power Management for Computing

• Charging Circuits and Battery Protection

MARKING DIAGRAM &

PIN ASSIGNMENT

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol Value

Unit

Drain

−20

8.0

DSS

Gate−to−Source Voltage

TR4 MG

Continuous Drain

Current (Note 1)

Steady T = 25°C

State

−2.4

−1.7

−3.2

0.73

T = 85°C

SOT−23

CASE 318

STYLE 21

Gate

t ≤ 10 s T = 25°C

Source

Power Dissipation

(Note 1)

Steady T = 25°C

State

TR4

= Device Code

= Date Code

t ≤ 10 s

1.25

−1.8

−1.3

0.42

= Pb−Free Package

(*Note: Microdot may be in either location)

Continuous Drain

Current (Note 2)

Steady T = 25°C

State

T = 85°C

Power Dissipation

(Note 2)

T = 25°C

ORDERING INFORMATION

Pulsed Drain Current

tp = 10 ms

−18

†

Device

Package

Shipping

ESD Capability (Note 3)

C = 100 pF,

RS = 1500 W

ESD

225

NTR4101PT1G

NTR4101PT1H

SOT−23

(Pb−Free)

3000 / Tape &

Reel

Operating Junction and Storage Temperature

T ,

−55 to

150

°C

STG

NTRV4101PT1G

SOT−23

(Pb−Free)

3000 / Tape &

Reel

Source Current (Body Diode)

−2.4

Single Pulse Drain−to−Source Avalanche

EAS

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Energy (V = −8 V, I = −1.8 Apk, L = 10 mH,

= 25 W)

Lead Temperature for Soldering

Purposes (1/8” from case for 10 s)

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

http://www.twtysemi.com

sales@twtysemi.com

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与NTR4101PT1G相关器件

型号	品牌	获取价格	描述	数据表
NTR4101PT1H	TYSEMI	获取价格	Trench Power MOSFET â20 V, Single PâChann
NTR4170N	TYSEMI	获取价格	Power MOSFET 30 V, 3.2 A, Single NâChannel,
NTR4170N	ONSEMI	获取价格	Power MOSFET 30 V, 3.2 A, Single N−Channel, SOT−23
NTR4170NT	KEXIN	获取价格	N-Channel MOSFET
NTR4170NT1G	ONSEMI	获取价格	Power MOSFET 30 V, 3.2 A, Single N−Channel, SOT−23
NTR4170NT1G	TYSEMI	获取价格	Power MOSFET 30 V, 3.2 A, Single NâChannel,
NTR4170NT3G	TYSEMI	获取价格	Power MOSFET 30 V, 3.2 A, Single NâChannel,
NTR4170NT3G	ONSEMI	获取价格	Power MOSFET 30 V, 3.2 A, Single N−Channel, SOT−23
NTR4171P	ONSEMI	获取价格	Power MOSFET −30 V, −3.5 A, Single P−Channel, SOT−23
NTR4171P	TYSEMI	获取价格	Power MOSFET -30 V, -3.5 A, Single P-Channel, SOT-23

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